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首頁 >IRF020>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFD020	文件：238.94 Kbytes Page：6 Pages	HEXFETTRANSISTORSN-CHANNELHEXDIP 50Volt,0.10Ohm,1-WattHEXDIP HEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachievesverylowon-stateresistancecombinedwithhightransconductanceandextremedevicerugg	IRF International Rectifier	IRF
IRFD020	文件：222.71 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION TheHVMDIPtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHVMDIPdesignachievesverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness.HVMDIPsfeatureallofthe	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD020	文件：246.45 Kbytes Page：9 Pages	PowerMOSFET	TFUNKVishay Telefunken 威世威世（VISHAY）集團(tuán)	TFUNK
IRFD020	文件：248.45 Kbytes Page：9 Pages	PowerMOSFET FEATURES ?Forautomaticinsertion ?Compact,endstackable ?Fastswitching ?Easeofparalleling ?Excellenttemperaturestability ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION TheHVMDIPtechnologyisthekeytoVishay’sadva	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD020PBF	文件：222.71 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION TheHVMDIPtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHVMDIPdesignachievesverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness.HVMDIPsfeatureallofthe	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD020PBF	文件：248.45 Kbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR020	文件：1.71489 Mbytes Page：9 Pages	HEXFETRPowerMOSFET DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniq	IRF International Rectifier	IRF
IRFR020	文件：1.84644 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques. FEATU	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR020	文件：1.05728 Mbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR020	文件：1.05728 Mbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR020	文件：4.37106 Mbytes Page：9 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques. FEATU	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR020	文件：674.87 Kbytes Page：5 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司	DOINGTER
IRFR020	文件：321.29 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFR020	文件：1.05947 Mbytes Page：13 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Surface-mount(IRFR020,SiHFR020) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR020PBF	文件：1.84644 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques. FEATU	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR020PBF	文件：1.05728 Mbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR020PBF	文件：4.37106 Mbytes Page：9 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques. FEATU	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR020TR	文件：1.84644 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques. FEATU	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR020TR	文件：1.05728 Mbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR020TR	文件：4.37106 Mbytes Page：9 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques. FEATU	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI

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供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市勤思達(dá)科技有限公司	IRF020	IR	1415+	TO-252	28500	全新原裝正品,優(yōu)勢熱賣	詢價
深圳市博浩通科技有限公司	IRF020	IR	23+	SOT-252	6000	專業(yè)優(yōu)勢供應(yīng)	詢價
深圳市聯(lián)世界科技有限公司	IRF0210	IR	1998		300	原裝正品現(xiàn)貨庫存價優(yōu)	詢價
深圳市鼎欣微電子有限公司	IRF022	IR	21+	TO-252	30000	只做正品原裝現(xiàn)貨	詢價
深圳市河鋒鑫科技有限公司	IRF022	IR	22+	TO-252	6000	終端可免費(fèi)供樣,支持BOM配單	詢價
深圳市創(chuàng)新跡電子有限公司	IRF022	IR	23+	TO-252	8000	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價
深圳市安富世紀(jì)電子有限公司	IRF022	IR	23+	TO-252	8000	只做原裝現(xiàn)貨	詢價
天津市博通航睿技術(shù)有限公司	IRF022	IR	23+	TO-252	7000		詢價
深圳市一線半導(dǎo)體有限公司	IRF0220	IR	24+	DIP	394		詢價
深圳市云迪科技有限公司	IRF0220	IR	22+	DIP	10000	原裝正品優(yōu)勢現(xiàn)貨供應(yīng)	詢價

更多IRF020供應(yīng)商更新時間2025-1-7 11:03:00

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