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IRF624

250V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF624

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF624

isc N-Channel MOSFET Transistor

?DESCRITION ?Designedforhighspeedapplications,suchasswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulse. ?FEATURES ?RDS(on)=1.1Ω ?3.8Aand250V ?singlepulseavalancheenergyrated ?SOAisPower-DissipationLimited ?LinearTransfe

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF624

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF624_V01

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF624A

Advanced Power MOSFET

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=250V ?LowRDS(ON):0.742?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF624B

250V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF624PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF624S

HEXFET Power MOSFET

DESCRIPTION ThirdGenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?SurfaceMount ?availableinTape&Reel ?DynamicdV/dtRating ?RepetitiveAval

IRF

International Rectifier

IRF624S

Available in Tape and Reel

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprov

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF624S

Power MOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF624S_V01

Power MOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF624SPBF

HEXFET? Power MOSFET

DESCRIPTION ThirdGenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?SurfaceMount ?availableinTape&Reel ?DynamicdV/dtRating ?RepetitiveAval

IRF

International Rectifier

IRF624PBF

HEXFET Power MOSFET

IRF

International Rectifier

IRF624SPBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRF624

  • 功能描述：

    MOSFET N-Chan 250V 4.4 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
2015+
TO-220AB
12500
全新原裝,現(xiàn)貨庫存長期供應(yīng)
 詢價
IR
23+
TO-220
35890
詢價
IR
05+
原廠原裝
50051
只做全新原裝真實現(xiàn)貨供應(yīng)
 詢價
IR
24+
TO-220AB
8866
詢價
三星
23+
DIP16
5000
原裝正品,假一罰十
 詢價
SEC
17+
TO-220
6200
詢價
IR
23+
TO-220AB
8600
全新原裝現(xiàn)貨
 詢價
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
SEC
2018+
TO220
6528
承若只做進(jìn)口原裝正品假一賠十!
 詢價
更多IRF624供應(yīng)商 更新時間2025-1-16 13:00:00

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