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IRFD020中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書

IRFD020
廠商型號

IRFD020

功能描述

HEXFET TRANSISTORS N-CHANNEL HEXDIP

文件大小

238.94 Kbytes

頁面數(shù)量

6

生產(chǎn)廠商 International Rectifier
企業(yè)簡稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-3-1 23:00:00

人工找貨

IRFD020價格和庫存,歡迎聯(lián)系客服免費人工找貨

IRFD020規(guī)格書詳情

50 Volt, 0.10 Ohm, 1-Watt HEXDIP

HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness. HEXFETs feature all of the established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters.

The HVMDIP 4-pin, Dual-In-Line Package brings the advantages of HVMDIPs to high volume applications where automatic PC board insertion is desirable, such as circuit boards for computers, printers, telecommunications equipment, and consumer products. Their compatibility with automatic insertion equipment, low-profile and end stackable features represent the state-of-the-art in power device packaging.

FEATURES

■ For Automatic Insertion

■ Compact, End Stackable

■ Fast Switching

■ Low Drive Current

■ Easily Paralleled

■ Excellent Temperature Stability

產(chǎn)品屬性

  • 型號:

    IRFD020

  • 功能描述:

    MOSFET N-Chan 50V 2.4 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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