| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF634B | 250V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
IRF634B | 250V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
IRF634B | POWER MOSFET | SUNTAC Suntac Electronic Corp. | SUNTAC | |
IRF634B | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
N-CHANNEL250V-0.38ohm-8ATO-220/TO-220FPMESHOVERLAY??MOSFET Description UsingthelatesthighvoltageMESHOVERLAY?process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformance.ThenewpatentedSTriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,makesitsuitableincovertersforli | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-channel250V-0.38廓-8ATO-220/TO-220FPMeshOverlay??PowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET(Vdss=250V,Rds(on)=0.435ohm,Id=8.0A) Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=250V,Rds(on)=0.435ohm,Id=8.0A) Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET(Vdss=250V,Rds(on)=0.435ohm,Id=8.0A) Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
詳細(xì)參數(shù)
- 型號：
IRF634B
- 制造商：
Rochester Electronics LLC
- 制造商：
Fairchild Semiconductor Corporation
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
TO220 |
8950 |
BOM配單專家,發(fā)貨快,價格低 |
詢價 | ||
FAIRCHILD/仙童 |
21+ |
TO-220 |
6000 |
原裝正品 |
詢價 | ||
FAIRCHILD/仙童 |
24+ |
TO 220 |
155401 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
FAIRCHILD |
24+ |
TO-220 |
30000 |
詢價 | |||
IR |
23+ |
TO-220 |
8238 |
詢價 | |||
仙童 |
06+ |
TO-220 |
5000 |
原裝庫存 |
詢價 | ||
IR |
15+ |
TO-220 |
11560 |
全新原裝,現(xiàn)貨庫存,長期供應(yīng) |
詢價 | ||
FA/ST |
2339+ |
to220 |
5825 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
FAIRCHILD |
2016+ |
TO-220 |
3500 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
FSC |
17+ |
TO-220 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 |
相關(guān)規(guī)格書
更多- IRF634B_FP001
- IRF634L
- IRF634NL
- IRF634NPBF
- IRF634NSPBF
- IRF634NSTRRPBF
- IRF634S
- IRF634STRL
- IRF634STRR
- IRF636
- IRF640,127
- IRF640_R4941
- IRF640ACP001
- IRF640B_FP001
- IRF640B_FP01F080
- IRF640H
- IRF640LPBF
- IRF640N_R4942
- IRF640NL
- IRF640NLPBF
- IRF640NS
- IRF640NSPBF
- IRF640NSTRLHR
- IRF640NSTRR
- IRF640NSTRRPBF
- IRF640R
- IRF640S2470
- IRF640SPBF
- IRF640STRL
- IRF640STRR
- IRF640T
- IRF641R
- IRF642R
- IRF644
- IRF644B_FP001
- IRF644L
- IRF644N
- IRF644NLPBF
- IRF644NS
- IRF644NSTRL
- IRF644NSTRR
- IRF644PBF
- IRF644SPBF
- IRF644STRLPBF
- IRF644STRRPBF
相關(guān)庫存
更多- IRF634FP
- IRF634N
- IRF634NLPBF
- IRF634NS
- IRF634NSTRLPBF
- IRF634PBF
- IRF634SPBF
- IRF634STRLPBF
- IRF634STRRPBF
- IRF640
- IRF640/D
- IRF640A
- IRF640B
- IRF640B_FP001_Q
- IRF640FP
- IRF640L
- IRF640N
- IRF640NHR
- IRF640NLHR
- IRF640NPBF
- IRF640NSHR
- IRF640NSTRL
- IRF640NSTRLPBF
- IRF640NSTRRHR
- IRF640PBF
- IRF640S
- IRF640S2497
- IRF640ST4
- IRF640STRLPBF
- IRF640STRRPBF
- IRF641
- IRF642
- IRF643
- IRF644A
- IRF644FP
- IRF644LPBF
- IRF644NL
- IRF644NPBF
- IRF644NSPBF
- IRF644NSTRLPBF
- IRF644NSTRRPBF
- IRF644S
- IRF644STRL
- IRF644STRR
- IRF645
