首頁(yè)>IRF634N>規(guī)格書詳情

IRF634N中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRF634N
廠商型號(hào)

IRF634N

功能描述

Power MOSFET

文件大小

162.91 Kbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 Vishay Siliconix
企業(yè)簡(jiǎn)稱

Vishay威世科技

中文名稱

威世科技半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-14 17:02:00

IRF634N規(guī)格書詳情

DESCRIPTION

Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low

on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

FEATURES

? Advanced Process Technology

? Dynamic dV/dt Rating

? 175 °C Operating Temperature

? Fast Switching

? Fully Avalanche Rated

? Ease of Paralleling

? Simple Drive Requirements

? Lead (Pb)-free Available

產(chǎn)品屬性

  • 型號(hào):

    IRF634N

  • 功能描述:

    MOSFET N-Chan 250V 8.0 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
IR
23+
TO-263
28000
原裝正品
詢價(jià)
IR
21+
TO-263
5587
原裝現(xiàn)貨庫(kù)存
詢價(jià)
IR
24+
TO-220AB
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
詢價(jià)
IR
22+23+
TO-220
27729
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價(jià)
IR
22+
TO-263
8000
原裝正品支持實(shí)單
詢價(jià)
IR
TO220
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
詢價(jià)
IR
23+
TO-220
35890
詢價(jià)
IR
24+
TO-220AB
8866
詢價(jià)
IR
1922+
TO-263
367
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
IR
23+
TO-220AB
8600
全新原裝現(xiàn)貨
詢價(jià)