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IRF640S

PowerMOSFET(Vdss=200V,Rds(on)=0.18ohm,Id=18A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcosteffectiveness. SurfaceMount(IRF640S) Low-profilethrough-hole(IRF640L) AvailableinTape&

IRF

International Rectifier

IRF640S

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications.

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

IRF640S

N-CHANNEL200V-0.150ohm-18ATO-263MESHOVERLAY]MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusinghecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwith standardpartsfromvarioussources. ■TYPICALRDS(on)=0.150? ■EXTREMELYHIGHdv/dtCAPABILITY ■

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF640S

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640S

PowerMOSFET

FEATURES ?Surfacemount ?Low-profilethrough-hole ?Availableintapeandreel ?DynamicdV/dtrating ?150°Coperatingtemperature ?Fastswitching ?Fullyavalancherated ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatas

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640S

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.18mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF640SPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640SPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640STRL

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640STRLPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRF640R

  • 制造商：

    Rochester Electronics LLC

  • 功能描述：

    - Bulk

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
N/A
56000
一級代理-主營優(yōu)勢-實(shí)惠價格-不悔選擇
 詢價
IR
06+
TO-263
15000
自己公司全新庫存絕對有貨
 詢價
IR
2015+
D2-Pak
12500
全新原裝,現(xiàn)貨庫存長期供應(yīng)
 詢價
IR
24+/25+
579
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
IR
23+
TO-263
35890
詢價
IR
23+
TO/263
7000
絕對全新原裝!100%保質(zhì)量特價!請放心訂購!
 詢價
IR
2016+
TO-263
6528
只做原裝正品現(xiàn)貨!或訂貨
 詢價
IR
23+
TO263
7750
全新原裝優(yōu)勢
 詢價
IR
24+
D2-Pak
8866
詢價
IR
24+
原廠封裝
1000
原裝現(xiàn)貨假一罰十
 詢價
更多IRF640R供應(yīng)商 更新時間2025-6-13 11:06:00

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