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IRF640S中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

IRF640S
廠商型號

IRF640S

功能描述

Power MOSFET

文件大小

237.05 Kbytes

頁面數(shù)量

10

生產(chǎn)廠商 Vishay Siliconix
企業(yè)簡稱

Vishay威世科技

中文名稱

威世科技半導體官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-4-14 16:19:00

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IRF640S規(guī)格書詳情

FEATURES

? Surface mount

? Low-profile through-hole

? Available in tape and reel

? Dynamic dV/dt rating

? 150 °C operating temperature

? Fast switching

? Fully avalanche rated

? Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note?

* This datasheet provides information about parts that are?

RoHS-compliant and / or parts that are non-RoHS-compliant. For?

example, parts with lead (Pb) terminations are not RoHS-compliant.?

Please see the information / tables in this datasheet for details.

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combinations of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.?

The D2PAK is a surface mount power package capable of

accommodating die size up to HEX-4. It provides the

highest power capability and the last lowest possible

on-resistance in any existing surface mount package. The

D2PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0 W in a typical surface mount application. The

through-hole version (SiHF640L) is available for low-profile

applications.

產(chǎn)品屬性

  • 型號:

    IRF640S

  • 功能描述:

    MOSFET N-Chan 200V 18 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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