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IRF640NSPBF規(guī)格書詳情
Description
Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Ease of Paralleling
● Simple Drive Requirements
● Lead-Free
產(chǎn)品屬性
- 型號(hào):
IRF640NSPBF
- 功能描述:
MOSFET 30V 1 N-CH 150mOhm HEXFET 200V VDSS
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO-263 |
58000 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)! |
詢價(jià) | ||
INFINEON |
06+ |
TO-263 |
50 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
22+ |
5000 |
詢價(jià) | |||||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
IR |
2021+ |
TO-263 |
3500 |
十年專營(yíng)原裝現(xiàn)貨,假一賠十 |
詢價(jià) | ||
ADI |
2022+ |
LQFP |
6000 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | ||
IR |
23+ |
D2PAK |
90000 |
只做原廠渠道價(jià)格優(yōu)勢(shì)可提供技術(shù)支持 |
詢價(jià) | ||
IR |
TO-263 |
68500 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨 |
詢價(jià) | |||
IR |
21+ |
D2PAK |
12880 |
公司只做原裝,誠(chéng)信經(jīng)營(yíng) |
詢價(jià) | ||
INFINEON/英飛凌 |
2022+ |
5000 |
只做原裝,價(jià)格優(yōu)惠,長(zhǎng)期供貨。 |
詢價(jià) |