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IRF640NPBF規(guī)格書詳情
Description
Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Ease of Paralleling
● Simple Drive Requirements
● Lead-Free
產(chǎn)品屬性
- 型號：
IRF640NPBF
- 功能描述：
MOSFET MOSFT 200V 18A 150mOhm 44.7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
INFINEON |
22+ |
TO-220 |
12800 |
原裝,現(xiàn)貨 |
詢價 | ||
INFINEON/IR |
23+ |
TO-220-3 |
50000 |
原裝正品 支持實單 |
詢價 | ||
IR |
21+ |
TO-220 |
7500 |
只做原裝所有貨源可以追溯原廠 |
詢價 | ||
22+ |
5000 |
詢價 | |||||
INFINEON/英飛凌 |
21+ |
TO220 |
8893 |
正規(guī)渠道原裝正品 |
詢價 | ||
IR |
22+ |
TO220 |
9000 |
原裝正品 |
詢價 | ||
IR |
23+ |
TO-220 |
65 |
原裝正品現(xiàn)貨 |
詢價 | ||
IR |
24+ |
TO-220 |
80000 |
代理進口原裝現(xiàn)貨假一賠十 |
詢價 | ||
Infineon/英飛凌 |
2023+ |
TO-220(TO-220-3) |
6000 |
全新原裝深圳倉庫現(xiàn)貨有單必成 |
詢價 | ||
6000 |
詢價 |
