IRF640S中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
廠商型號 |
IRF640S |
功能描述 | N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET |
文件大小 |
84.23 Kbytes |
頁面數(shù)量 |
8 頁 |
生產(chǎn)廠商 | STMicroelectronics |
企業(yè)簡稱 |
STMICROELECTRONICS【意法半導(dǎo)體】 |
中文名稱 | 意法半導(dǎo)體(ST)集團官網(wǎng) |
原廠標(biāo)識 | |
數(shù)據(jù)手冊 | |
更新時間 | 2024-10-24 23:00:00 |
IRF640S規(guī)格書詳情
DESCRIPTION
This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY?process. This technology matches and improves the performances compared with
standard parts from various sources.
■ TYPICAL RDS(on)= 0.150?
■ EXTREMELY HIGH dv/dt CAPABILITY
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ HIGH CURRENT SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.
產(chǎn)品屬性
- 型號:
IRF640S
- 功能描述:
MOSFET N-Chan 200V 18 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
21+ |
TO-263 |
5587 |
原裝現(xiàn)貨庫存 |
詢價 | ||
VISHAY/威世 |
2020+ |
NA |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
VISHAY |
2018+ |
TO-263 |
26976 |
代理原裝現(xiàn)貨/特價熱賣! |
詢價 | ||
VISHAY |
18+ |
SOT-263 |
355 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
2000 |
180 |
原裝正品長期供貨,如假包賠包換 徐小姐13714450367 |
詢價 | |||
IR |
2023+ |
D2-PAK |
50000 |
原裝現(xiàn)貨 |
詢價 | ||
VISHAY |
2339+ |
TO-263 |
5825 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
IR |
1822+ |
TO263 |
9852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險!! |
詢價 | ||
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
ST/意法 |
06+ |
TO-263 |
15 |
詢價 |