| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF640A | Advanced Power MOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10A(Max.)@VDS=200V ■LowerRDS(ON):0.144?(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
IRF640A | isc N-Channel MOSFET Transistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?LowRDS(on)=0.144Ω(TYP) ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?RuggedGateOxideTechnology | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?LowRDS(on)=0.180Ω(?TYP) ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?RuggedGateOxideTechnology | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-CHANNEL200V-0.150ohm-18ATO-220/TO-220FPMESHOVERLAY]MOSFET DESCRIPTION ThispowerMOSFETisdesignedusinghecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.150? ■EXTREMELYHIGHdV/dtCAPABILITY ■VERYLOW | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
IRF640FP18A200VNCHANNELPOWERMOSFET GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. FEATURES ?SiliconGateforFastSwitchingSpeeds ?LowRDS(on)toMinimizeOn-Losses.SpecifiedatElevatedTemperat | FCIFirst Components International 戈采戈采企業(yè)股份有限公司 | FCI | ||
PowerMOSFET(Vdss=200V,Rds(on)=0.18ohm,Id=18A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcosteffectiveness. SurfaceMount(IRF640S) Low-profilethrough-hole(IRF640L) AvailableinTape& | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET(Vdss=200V,Rds(on)=0.15ohm,Id=18A) Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRF International Rectifier | IRF | ||
N-ChannelPowerMOSFETs200V,18A,0.15ohm Features ?UltraLowOn-Resistance -rDS(ON)=0.102?(Typ),VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER? ElectricalModels -SpiceandSABER?ThermalImpedanceModels ?PeakCurrentvsPulseWidthCurve ?UISRateingCurve | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor ?DESCRITION ?Efficientandreliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤150m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandre | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
AdvancedProcessTechnology Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. TheD2Pakisasurfac | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET(Vdss=200V,Rds(on)=0.15ohm,Id=18A) Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
N-ChannelPowerMOSFETs200V,18A,0.15ohm Features ?UltraLowOn-Resistance -rDS(ON)=0.102?(Typ),VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER? ElectricalModels -SpiceandSABER?ThermalImpedanceModels ?PeakCurrentvsPulseWidthCurve ?UISRateingCurve | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild |
詳細參數(shù)
- 型號：
IRF640A
- 制造商：
FAIRCHILD
- 制造商全稱：
Fairchild Semiconductor
- 功能描述：
Advanced Power MOSFET
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
仙童 |
06+ |
TO-220 |
5000 |
原裝庫存 |
詢價 | ||
SEC |
24+ |
TO-220 |
4250 |
詢價 | |||
FAIRCHILD |
23+ |
TO-220 |
9526 |
詢價 | |||
FAIRCHILD品牌 |
2016+ |
TO-220 |
6528 |
房間原裝進口現(xiàn)貨假一賠十 |
詢價 | ||
SEC |
23+ |
TO220 |
1008 |
全新原裝現(xiàn)貨 |
詢價 | ||
FSC |
2020+ |
TO220 |
28 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
FAIRCHILD |
2015+ |
TO-220 |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
23+ |
原廠封裝 |
9888 |
專做原裝正品,假一罰百! |
詢價 | |||
FAIRCHI |
21+ |
TO-220 |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 |
相關(guān)規(guī)格書
更多- IRF640ACP001
- IRF640B_FP001
- IRF640B_FP01F080
- IRF640H
- IRF640LPBF
- IRF640N_R4942
- IRF640NL
- IRF640NLPBF
- IRF640NS
- IRF640NSPBF
- IRF640NSTRLHR
- IRF640NSTRR
- IRF640NSTRRPBF
- IRF640R
- IRF640S2470
- IRF640SPBF
- IRF640STRL
- IRF640STRR
- IRF640T
- IRF641R
- IRF642R
- IRF644
- IRF644B_FP001
- IRF644L
- IRF644N
- IRF644NLPBF
- IRF644NS
- IRF644NSTRL
- IRF644NSTRR
- IRF644PBF
- IRF644SPBF
- IRF644STRLPBF
- IRF644STRRPBF
- IRF646
- IRF647
- IRF650B
- IRF654
- IRF654B
- IRF654BFP001
- IRF6602
- IRF6603
- IRF6604
- IRF6607
- IRF6608
- IRF6609
相關(guān)庫存
更多- IRF640B
- IRF640B_FP001_Q
- IRF640FP
- IRF640L
- IRF640N
- IRF640NHR
- IRF640NLHR
- IRF640NPBF
- IRF640NSHR
- IRF640NSTRL
- IRF640NSTRLPBF
- IRF640NSTRRHR
- IRF640PBF
- IRF640S
- IRF640S2497
- IRF640ST4
- IRF640STRLPBF
- IRF640STRRPBF
- IRF641
- IRF642
- IRF643
- IRF644A
- IRF644FP
- IRF644LPBF
- IRF644NL
- IRF644NPBF
- IRF644NSPBF
- IRF644NSTRLPBF
- IRF644NSTRRPBF
- IRF644S
- IRF644STRL
- IRF644STRR
- IRF645
- IRF646_R4943
- IRF650A
- IRF650B_FP001
- IRF654A
- IRF654B_FP001
- IRF6601
- IRF6602TR1
- IRF6603TR1
- IRF6604TR1
- IRF6607TR1
- IRF6608TR1
- IRF6609TR1
