零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRF640N | Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A) Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRF International Rectifier | IRF | |
IRF640N | N-Channel Power MOSFETs 200V, 18A, 0.15ohm Features ?UltraLowOn-Resistance -rDS(ON)=0.102?(Typ),VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER? ElectricalModels -SpiceandSABER?ThermalImpedanceModels ?PeakCurrentvsPulseWidthCurve ?UISRateingCurve | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
IRF640N | N-Channel MOSFET Transistor ?DESCRITION ?Efficientandreliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤150m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandre | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
IRF640N | Advanced Process Technology Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. TheD2Pakisasurfac | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
IRF640N | HEXFET Power MOSFET | IRF International Rectifier | IRF | |
IRF640N | Advanced Process Technology | IRF International Rectifier | IRF | |
IRF640N | N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
N-Channel Power MOSFETs 200V, 18A, 0.15ohm Features ?UltraLowOn-Resistance -rDS(ON)=0.102?(Typ),VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER? ElectricalModels -SpiceandSABER?ThermalImpedanceModels ?PeakCurrentvsPulseWidthCurve ?UISRateingCurve | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
Advanced Process Technology Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. TheD2Pakisasurfac | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Isc N-Channel MOSFET Transistor ?FEATURES ?WithTO-262packaging ?Highspeedswitching ?Lowgateinputresistance ?Standardlevelgatedrive ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Powersupply ?Switchingapplic | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A) Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRF International Rectifier | IRF | ||
HEXFET? Power MOSFET Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRF International Rectifier | IRF | ||
Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFET? Power MOSFET Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRF International Rectifier | IRF | ||
Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-Channel Power MOSFETs 200V, 18A, 0.15ohm Features ?UltraLowOn-Resistance -rDS(ON)=0.102?(Typ),VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER? ElectricalModels -SpiceandSABER?ThermalImpedanceModels ?PeakCurrentvsPulseWidthCurve ?UISRateingCurve | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
Advanced Process Technology Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. TheD2Pakisasurfac | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A) Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRF International Rectifier | IRF | ||
Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFET? Power MOSFET Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRF International Rectifier | IRF |
詳細(xì)參數(shù)
- 型號:
IRF640N
- 功能描述:
MOSFET N-CH 200V 18A TO-220AB
- RoHS:
否
- 類別:
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
- 系列:
HEXFET®
- 標(biāo)準(zhǔn)包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點(diǎn):
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應(yīng)商設(shè)備封裝:
TO-220FP
- 包裝:
管件
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-220 |
3500 |
全新原裝,公司現(xiàn)貨銷售 |
詢價 | ||
IR |
13+ |
TO-220/TO-263 |
10000 |
深圳市勤思達(dá)科技有限公司主營IR系列,現(xiàn)貨供應(yīng)IRF640N,全新原裝,正品供應(yīng)。 |
詢價 | ||
IR |
17+ |
TO-220 |
50000 |
深圳市弘為電子有限公司,是原裝現(xiàn)貨庫存為主的混合型供應(yīng)商,專注功率器件。
代理和分銷:Infineon(英飛凌)+IR(國際整流器)、Yea Shin(臺灣亞昕)、Mosway(科域)
應(yīng)用領(lǐng)域:電源、電機(jī)控制與驅(qū)動、家電、電池管理、電動交通、汽車電子、工業(yè)控制、電焊機(jī)、節(jié)能照明 |
詢價 | ||
IR |
新 |
進(jìn)口原裝 |
3000 |
庫存現(xiàn)貨 |
詢價 | ||
IR |
24+ |
TO-220 |
3600 |
原裝正品!公司現(xiàn)貨熱賣! |
詢價 | ||
IR |
24+ |
TO-220 |
258 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
FSC/IR |
24+ |
TO-220 |
11000 |
絕對原裝現(xiàn)貨,價格低,歡迎詢購! |
詢價 | ||
IR(國際整流器) |
2023+ |
N/A |
4550 |
全新原裝正品 |
詢價 | ||
H |
24+ |
TO 220 |
157566 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IR |
2405+ |
TO-220 |
4475 |
只做原裝正品渠道訂貨 |
詢價 |
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