首頁 >IRFP60N06>規(guī)格書列表

零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

KF60N06P

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrection,electroniclampballastsbasedonhalfbridgetopology,DC/

KECKEC CORPORATION

KEC株式會社

ME60N06G

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

MTB60N06

TMOSPOWERFET60AMPERES60VOLTS

HDTMOSE-FET?HighEnergyPowerFETD2PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswit

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB60N06HD

TMOSPOWERFET60AMPERES60VOLTS

HDTMOSE-FET?HighEnergyPowerFETD2PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswit

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB60N06HD

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTM60N06

N-CHANNELTWOSPOWERFETs

55and60AMPERE N-ChannelTMOSPOWERFETs rDS(on)=0.04OHM80and100VOLTS rDS(on)=0.28OHM50and60VOLTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTM60N06

N-CHANNELENHANCEMENT-MODESILICONGATETMOSPOWERFIELDEFFECTTRANSISTOR

N-CHANNELENHANCEMENT-MODESILICONGATETMOSPOWERFIELDEFFECTTRANSISTOR TheseTMOSPowerFETsaredesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. ?SiliconGateforFastSwitchingSpeeds—SwitchingTimes

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTM60N06

N-CHANNELENHANCEMENT-MODESILICONGATETMOSPOWERFIELDEFFECTTRANSISTOR

55and60AMPERE N-ChannelTMOSPOWERFETs rDS(on)=0.04OHM80and100VOLTS rDS(on)=0.28OHM50and60VOLTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTP60N06

TMOSPOWERFET60AMPERES60VOLTSRDS(on)=0.014OHM

Thisadvancedhigh–celldensityHDTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP60N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=14mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
20+
TO-247
38900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
IR
21+
TO-247
10000
原裝現(xiàn)貨假一罰十
 詢價
IR
23+
TO220
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
IR
22+
TO-247
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
TO-247
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
IR
23+
TO-247
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
IR
23+
TO-247
7000
詢價
ST
6000
面議
19
TO-220
 詢價
ST
24+
TO-220
200000
原裝進(jìn)口正口,支持樣品
 詢價
IR
23+
TO3P
8653
全新原裝優(yōu)勢
 詢價
更多IRFP60N06供應(yīng)商 更新時間2025-3-26 20:31:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多