零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFU110 | Power MOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
IRFU110 | 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs 4.7A,100V,0.540Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseadvancedpowerMOSFETsaredesignedforuse | Intersil Intersil Corporation | Intersil | |
IRFU110 | Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
IRFU110 | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | |
IRFU110 | Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
Advanced Power MOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.289Ω(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
Power MOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-Channel 100-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI |
詳細(xì)參數(shù)
- 型號(hào):
IRFU110
- 功能描述:
MOSFET N-Chan 100V 4.3 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
SOT-251 |
30216 |
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S |
詢價(jià) | |||
IR |
24+ |
TO-251 |
18000 |
只做原廠渠道 可追溯貨源 |
詢價(jià) | ||
IR |
24+ |
TO-251 |
9518 |
絕對(duì)原裝現(xiàn)貨,價(jià)格低,歡迎詢購(gòu)! |
詢價(jià) | ||
IR |
24+ |
TO 251 |
161140 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
IR |
06+ |
TO-251 |
12000 |
原裝庫(kù)存 |
詢價(jià) | ||
IR |
23+ |
I-Pak |
19526 |
詢價(jià) | |||
IR |
2015+ |
I-Pak |
19889 |
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) | ||
VISHAY/IR |
24+ |
原廠封裝 |
600 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
FAIRCHILD |
16+ |
TO-251 |
10000 |
全新原裝現(xiàn)貨 |
詢價(jià) |
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