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IRFZ34

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ34

Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFZ34

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ34

Power MOSFET

FEATURES ?DynamicdV/dtRating ?175°COperatingTemperature ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFZ34

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

KERSEMI

Kersemi Electronic Co., Ltd.

IRFZ34

Power MOSFET

FEATURES ?DynamicdV/dtrating ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare R

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ34

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRFZ34

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ34

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ34

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ34

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ34_V02

Power MOSFET

FEATURES ?DynamicdV/dtrating ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare R

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ34E

HEXFET POWER MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFZ34EPBF

HEXFET? Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFZ34L

HEXFET Power MOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFZ34L

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ34L

Power MOSFET

FEATURES ?Advancedprocesstechnology ?Surfacemount ?Low-profilethrough-hole(IRFZ34L,SiHFZ34L) ?175°Coperatingtemperature ?Fastswitching ?Materialcategorization:fordefinitionsof compliancepleasesee www.vishay.com/doc?99912 Note? *Thisdatasheetprovidesinformationa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ34LPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ34N

Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFZ34N

isc Silicon NPN Power Transistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤40m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperatio

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    IRFZ34

  • 功能描述：

    MOSFET N-Chan 60V 30 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
23+
TO-220
3700
原廠原裝正品
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
23+
TO-220
35890
詢價
FAIRCHILD
05+
原廠原裝
551
只做全新原裝真實現(xiàn)貨供應(yīng)
 詢價
IR
1215+
TO-220
150000
全新原裝,絕對正品,公司大量現(xiàn)貨供應(yīng).
 詢價
IR
24+
TO-220
1000
詢價
IR
2016+
TO220
3000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
IR
2339+
TO220
5825
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
IR
16+
原廠封裝
1945
原裝現(xiàn)貨假一罰十
 詢價
IR
23+
TO-220
8890
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價
更多IRFZ34供應(yīng)商 更新時間2024-10-24 15:06:00

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