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IRG4BC30KPBF

INSULATED GATE BIPOLAR TRANSISTOR 

ShortCircuitRatedUltraFastIGBT

IRF

International Rectifier

IRG4BC30KPBF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

IRF

International Rectifier

IRG4BC30KPBF

包裝:管件 封裝/外殼:TO-220-3 類(lèi)別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 28A 100W TO220AB

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRG4BC30KS

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious

IRF

International Rectifier

IRG4BC30K-S

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious

IRF

International Rectifier

IRG4BC30K-S

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

IRF

International Rectifier

IRG4BC30K-SPBF

INSULATEDGATEBIPOLARTRANSISTORShortCiruitRatedUltraFastIGBT

INSULATEDGATEBIPOLARTRANSISTORShortCiruitRatedUltraFastIGBT Features ?Highshortcircuitratingoptimizedformotorcontrol tsc=10μs,@360VVCE(start),TJ=125°C VGE=15V ?Conbineslowconductionlosseswithhigh switchingspeed ?Latestgenerationdesignprovidest

IRF

International Rectifier

IRG4BC30S

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=18A)

Features ?Standard:optimizedforminimumsaturation voltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4BC30S

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC30SPBF

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

IRF

International Rectifier

IRG4BC30SPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4BC30SS

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=18A)

Features ?Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4BC30S-S

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=18A)

Features ?Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4BC30S-S

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=18A)

Features ?Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4BC30S-SPBF

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT

Features ?Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4BC30U

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC30U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A)

Features ?UltraFast:optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-220ABpackage Benefits ?Gener

IRF

International Rectifier

IRG4BC30UD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A)

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-

IRF

International Rectifier

IRG4BC30UD

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC30UDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODEUltraFastCoPackIGBT

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-

IRF

International Rectifier

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    IRG4BC30KPBF

  • 制造商:

    Infineon Technologies

  • 類(lèi)別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝:

    管件

  • 不同?Vge、Ic 時(shí)?Vce(on)(最大值):

    2.7V @ 15V,16A

  • 開(kāi)關(guān)能量:

    360μJ(開(kāi)),510μJ(關(guān))

  • 輸入類(lèi)型:

    標(biāo)準(zhǔn)

  • 25°C 時(shí) Td(開(kāi)/關(guān))值:

    26ns/130ns

  • 測(cè)試條件:

    480V,16A,23 歐姆,15V

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類(lèi)型:

    通孔

  • 封裝/外殼:

    TO-220-3

  • 供應(yīng)商器件封裝:

    TO-220AB

  • 描述:

    IGBT 600V 28A 100W TO220AB

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON/英飛凌
22+
TO-220
4800
專(zhuān)營(yíng)INFINEON/英飛凌全新原裝進(jìn)口正品
詢(xún)價(jià)
IR
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
詢(xún)價(jià)
IR
2007+
1950
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
詢(xún)價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠(chǎng)免費(fèi)送樣
詢(xún)價(jià)
IR
23+
NA
9936
專(zhuān)做原裝正品,假一罰百!
詢(xún)價(jià)
InternationalRectifier
2022+
250
全新原裝 貨期兩周
詢(xún)價(jià)
Infineon
1931+
N/A
493
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
詢(xún)價(jià)
N/A
2021+
SMD
100500
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
詢(xún)價(jià)
INFINEON
1809+
TO-220
1675
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
詢(xún)價(jià)
IR
21+
TO-220
10000
全新原裝 公司現(xiàn)貨 價(jià)格優(yōu)
詢(xún)價(jià)
更多IRG4BC30KPBF供應(yīng)商 更新時(shí)間2025-1-15 12:07:00