首頁(yè) >IRG4BC30KPBF>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRG4BC30KPBF | INSULATED GATE BIPOLAR TRANSISTOR ShortCircuitRatedUltraFastIGBT | IRF International Rectifier | IRF | |
IRG4BC30KPBF | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) | IRF International Rectifier | IRF | |
IRG4BC30KPBF | 包裝:管件 封裝/外殼:TO-220-3 類(lèi)別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 28A 100W TO220AB | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A) Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A) Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A) | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORShortCiruitRatedUltraFastIGBT INSULATEDGATEBIPOLARTRANSISTORShortCiruitRatedUltraFastIGBT Features ?Highshortcircuitratingoptimizedformotorcontrol tsc=10μs,@360VVCE(start),TJ=125°C VGE=15V ?Conbineslowconductionlosseswithhigh switchingspeed ?Latestgenerationdesignprovidest | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=18A) Features ?Standard:optimizedforminimumsaturation voltageandlowoperatingfrequencies( | IRF International Rectifier | IRF | ||
FitRate/EquivalentDeviceHours | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A) | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=18A) Features ?Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies( | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=18A) Features ?Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies( | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=18A) Features ?Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies( | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT Features ?Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies( | IRF International Rectifier | IRF | ||
FitRate/EquivalentDeviceHours | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A) Features ?UltraFast:optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-220ABpackage Benefits ?Gener | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A) Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra- | IRF International Rectifier | IRF | ||
FitRate/EquivalentDeviceHours | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODEUltraFastCoPackIGBT Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra- | IRF International Rectifier | IRF |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
IRG4BC30KPBF
- 制造商:
Infineon Technologies
- 類(lèi)別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單
- 包裝:
管件
- 不同?Vge、Ic 時(shí)?Vce(on)(最大值):
2.7V @ 15V,16A
- 開(kāi)關(guān)能量:
360μJ(開(kāi)),510μJ(關(guān))
- 輸入類(lèi)型:
標(biāo)準(zhǔn)
- 25°C 時(shí) Td(開(kāi)/關(guān))值:
26ns/130ns
- 測(cè)試條件:
480V,16A,23 歐姆,15V
- 工作溫度:
-55°C ~ 150°C(TJ)
- 安裝類(lèi)型:
通孔
- 封裝/外殼:
TO-220-3
- 供應(yīng)商器件封裝:
TO-220AB
- 描述:
IGBT 600V 28A 100W TO220AB
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
22+ |
TO-220 |
4800 |
專(zhuān)營(yíng)INFINEON/英飛凌全新原裝進(jìn)口正品 |
詢(xún)價(jià) | ||
IR |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢(xún)價(jià) | ||
IR |
2007+ |
1950 |
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu) |
詢(xún)價(jià) | |||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠(chǎng)免費(fèi)送樣 |
詢(xún)價(jià) | ||
IR |
23+ |
NA |
9936 |
專(zhuān)做原裝正品,假一罰百! |
詢(xún)價(jià) | ||
InternationalRectifier |
2022+ |
250 |
全新原裝 貨期兩周 |
詢(xún)價(jià) | |||
Infineon |
1931+ |
N/A |
493 |
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物 |
詢(xún)價(jià) | ||
N/A |
2021+ |
SMD |
100500 |
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢(xún)價(jià) | ||
INFINEON |
1809+ |
TO-220 |
1675 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢(xún)價(jià) | ||
IR |
21+ |
TO-220 |
10000 |
全新原裝 公司現(xiàn)貨 價(jià)格優(yōu) |
詢(xún)價(jià) |
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