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IRG4PH30KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,VCC=720V,TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Tighterparameterdistributionandhigherefficiency thanpreviousgenerations ?IGBTco-packagedwithHE

IRF

International Rectifier

IRG4PH30KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

International Rectifier

IRG4PH30KDPBF

包裝:卷帶(TR) 封裝/外殼:TO-247-3 類(lèi)別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 1200V 20A 100W TO247AC

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRG4PH30KDPBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

International Rectifier

IRG4PH30

INSULATEDGATEBIPOLARTRANSISTOR(Vces=1200V,Vce(on)typ.=3.10V,@Vge=15V,Ic=10A)

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,VCC=720V,TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious g

IRF

International Rectifier

IRG4PH30

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=1200V,Vce(on)typ.=3.10V,@Vge=15V,Ic=10A)

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,VCC=720V,TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Tighterparameterdistributionandhigherefficiency thanpreviousgenerations ?IGBTco-packagedwithHE

IRF

International Rectifier

IRG4PH30K

INSULATEDGATEBIPOLARTRANSISTOR(Vces=1200V,Vce(on)typ.=3.10V,@Vge=15V,Ic=10A)

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,VCC=720V,TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious g

IRF

International Rectifier

IRG4PH30KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=1200V,Vce(on)typ.=3.10V,@Vge=15V,Ic=10A)

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,VCC=720V,TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Tighterparameterdistributionandhigherefficiency thanpreviousgenerations ?IGBTco-packagedwithHE

IRF

International Rectifier

IRG4PH30KPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4PH30KPBF

INSULATEDGATEBIPOLARTRANSISTORShortCircuitRatedUltrafastIGBT

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,VCC=720V,TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious g

IRF

International Rectifier

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    IRG4PH30KDPBF

  • 制造商:

    Infineon Technologies

  • 類(lèi)別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝:

    卷帶(TR)

  • 不同?Vge、Ic 時(shí)?Vce(on)(最大值):

    4.2V @ 15V,10A

  • 開(kāi)關(guān)能量:

    950μJ(開(kāi)),1.15mJ(關(guān))

  • 輸入類(lèi)型:

    標(biāo)準(zhǔn)

  • 25°C 時(shí) Td(開(kāi)/關(guān))值:

    39ns/220ns

  • 測(cè)試條件:

    800V,10A,23 歐姆,15V

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類(lèi)型:

    通孔

  • 封裝/外殼:

    TO-247-3

  • 供應(yīng)商器件封裝:

    TO-247AC

  • 描述:

    IGBT 1200V 20A 100W TO247AC

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
15+
原廠原裝
3500
進(jìn)口原裝現(xiàn)貨假一賠十
詢(xún)價(jià)
IR
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
詢(xún)價(jià)
DISCRETE
25
IR
3500
詢(xún)價(jià)
IR
17+
TO-247
6200
100%原裝正品現(xiàn)貨
詢(xún)價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢(xún)價(jià)
IR
23+
TO-247
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)!
詢(xún)價(jià)
IR
2020+
TO-247
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
詢(xún)價(jià)
International Rectifier
2022+
1
全新原裝 貨期兩周
詢(xún)價(jià)
IR
21+
TO-247
30000
百域芯優(yōu)勢(shì) 實(shí)單必成 可開(kāi)13點(diǎn)增值稅
詢(xún)價(jià)
INFINEON
1809+
TO-247
1675
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
詢(xún)價(jià)
更多IRG4PH30KDPBF供應(yīng)商 更新時(shí)間2025-1-10 14:06:00