国内精品自产拍在线电影,青青青青草原国产免费,一边摸一边脱一边吃胸亲

首頁 >IRFR120TR>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFR120TR	文件：179.46 Kbytes Page：6 Pages	HEXFET POWER MOSFET DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR120) ?Str	IRF International Rectifier	IRF
IRFR120TR	文件：1.70201 Mbytes Page：8 Pages	IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFR120TRL	文件：1.88411 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFR120TRL	文件：1.70201 Mbytes Page：8 Pages	IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFR120TRL	文件：4.27848 Mbytes Page：7 Pages	Dynamic dV/dt Rating DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR120TRL	文件：4.22483 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR120TRLPBF	文件：1.88411 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFR120TRLPBF	文件：1.70201 Mbytes Page：8 Pages	IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFR120TRLPBF	文件：4.27848 Mbytes Page：7 Pages	Dynamic dV/dt Rating DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR120TRLPBF	文件：4.22483 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR120TRPBF	文件：1.70201 Mbytes Page：8 Pages	IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFR120TRPBF	文件：4.22483 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR120TRR	文件：1.70201 Mbytes Page：8 Pages	IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFR120TRR	文件：4.22483 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR120TRRPBF	文件：1.70201 Mbytes Page：8 Pages	IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFR120TRRPBF	文件：4.22483 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR120TRL	文件：4.27854 Mbytes Page：7 Pages	Dynamic dV/dt Rating	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR120TRLPBF	文件：4.27854 Mbytes Page：7 Pages	Dynamic dV/dt Rating	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR120TRLPBFA	文件：838.17 Kbytes Page：13 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFR120TRLPBF-BE3AB	文件：838.17 Kbytes Page：13 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導體	Vishay

12 >>>

詳細參數(shù)

型號：
IRFR120TR
功能描述：
MOSFET N-Chan 100V 7.7 Amp
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導通）：
0.014 Ohms
配置：
Single
安裝風格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市智芯遠電子有限公司	IRFR120TR	IR	22+	SOT	58560	代理品牌,原裝現(xiàn)貨,假一罰十	詢價
深圳市星佑電子有限公司	IRFR120TR	IR	05+	原廠原裝	2051	只做全新原裝真實現(xiàn)貨供應(yīng)	詢價
綠盛電子(香港)有限公司	IRFR120TR	IR	2015+	DIP/SMD	19889	一級代理原裝現(xiàn)貨,特價熱賣!	詢價
深圳市昌和盛利電子有限公司	IRFR120TR	IR	23+	原廠封裝	9896		詢價
深圳市博浩通科技有限公司	IRFR120TR	VISHAY	23+	D2Pak	7750	全新原裝優(yōu)勢	詢價
深圳市弘為電子有限公司	IRFR120TR		16+	TO-252	3000	原裝現(xiàn)貨假一罰十	詢價
深圳市毅創(chuàng)騰電子科技有限公司	IRFR120TR	IR		SOT	1000	正品原裝--自家現(xiàn)貨-實單可談	詢價
深圳市永貝爾科技有限公司	IRFR120TR	IRF	23+	NA	19960	只做進口原裝,終端工廠免費送樣	詢價
千層芯半導體(深圳)有限公司	IRFR120TR	IR	24+	SOT	30617	主打XILINX品牌價格絕對優(yōu)勢	詢價
深圳市振宏微科技有限公司	IRFR120TR	SILICONIX	23+	NA	1586	專做原裝正品,假一罰百!	詢價

更多IRFR120TR供應(yīng)商更新時間2025-1-8 9:08:00

詳細參數(shù)

相關(guān)規(guī)格書

相關(guān)庫存