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IRFZ24

Power MOSFET

FEATURES ?DynamicdV/dtrating ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidet

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ24

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissi

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ24

Power MOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFZ24

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRFZ24A

ADVANCED POWER MOSFET

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?175°COperatingTemperature ?LowerLeakageCurrent:10μA(Max.)@VDS=60V ?LowerRDS(ON):0.050μ(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFZ24L

HEXFET Power MOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRFZ24L

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerw

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ24LPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerw

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ24N

N-channel enhancement mode TrenchMOS transistor

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinswitchedmodepowe

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

IRFZ24N

Power MOSFET (Vdss=55V, Rds(on)=0.07ohm, Id=17A)

Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarew

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    IRFZ24

  • 功能描述：

    MOSFET N-Chan 60V 17 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
FSC
23+
TO-220
4600
原廠原裝正品
 詢價(jià)
IR
24+
N/A
8000
全新原裝正品,現(xiàn)貨銷售
 詢價(jià)
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
臺產(chǎn)
23+
TO-220
1500
絕對全新原裝!優(yōu)勢供貨渠道!特價(jià)!請放心訂購!
 詢價(jià)
IR
23+
TO-220
35890
詢價(jià)
IR
05+
原廠原裝
4866
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
SEC
24+
TO-220
101300
詢價(jià)
IR
2016+
TO-220
6523
只做進(jìn)口原裝現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
IR
2016+
TO-220
6000
公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
 詢價(jià)
臺產(chǎn)
23+
TO-220
9960
價(jià)格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價(jià)
更多IRFZ24供應(yīng)商 更新時(shí)間2025-2-11 15:39:00

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