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IRFBE30

Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ODynamicdv/dtRating ORepetitiveAvalancheRated OFastSwitching OEaseofPa

IRF

International Rectifier

IRFBE30

Dynamic dV/dt Rating Repetitive Avalanche Rated

DESCRIPTION TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50W.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. FEATURES ?Dynam

KERSEMI

Kersemi Electronic Co., Ltd.

IRFBE30

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=4.1A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance RDS(on)=3Ω(Max)@VGS=10V ·100avalanchetested DESCRIPTION ·motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFBE30

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBE30

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBE30

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBE30L

HEXFET? Power MOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ODynamicdv/dtRating ORepetitiveAvalancheRated OFastSwitching OEaseofPa

IRF

International Rectifier

IRFBE30L

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?FastSwitching ?EaseofP

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBE30L

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatasheetprovidesinformationaboutpartsthatare? R

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBE30LPBF

HEXFET Power MOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ODynamicdv/dtRating ORepetitiveAvalancheRated OFastSwitching OEaseofPa

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRFBE30

  • 功能描述：

    MOSFET 800V Single N-Channel HEXFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
2021+
TO220
16800
全新原裝正品,自家優(yōu)勢現(xiàn)貨
 詢價
IR
24+
TO 220
161347
明嘉萊只做原裝正品現(xiàn)貨
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
06+
TO-220
8000
全新原裝 絕對有貨
 詢價
IR
24+
TO-220
5225
詢價
IR
2015+
TO-220AB
12500
全新原裝,現(xiàn)貨庫存長期供應(yīng)
 詢價
2020+
79
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
IR
23+
TO-220
9896
詢價
IR
23+
TO-220
10000
原裝正品,假一罰十
 詢價
IR
23+
TO-220
6680
全新原裝優(yōu)勢
 詢價
更多IRFBE30供應(yīng)商 更新時間2025-2-11 17:51:00

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