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IRFR010

N-CHANNELPOWERMOSFET

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFR010

PowerMOSFET

DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR010

AVALANCHEANDdv/dtRATED

IRF

International Rectifier

IRFR010

PowerMOSFET

DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR010

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFR010

PowerMOSFET

FEATURES ?Lowdrivecurrent ?Surface-mount ?Fastswitching ?Easeofparalleling ?Excellenttemperaturestability ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION ThepowerMOSFETtechnologyisthekeytoVishay’s advancedlin

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR010PBF

PowerMOSFET

DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR010PBF

PowerMOSFET

DESCRIPTION ThePowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR010PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR010TRLPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR010TRPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR010TRRPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU010

AVALANCHEANDdv/dtRATED

IRF

International Rectifier

IRFU010

N-CHANNELPOWERMOSFET

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFU010

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

ISM010

SurfaceMountDevices

SPSEMIStarHope

瞬雷電子上海瞬雷科技有限公司

IT010

ISOTABTRIACSELECTRICALLYISOLATED

[HUTSONINDUSTRIES]

ETC1List of Unclassifed Manufacturers

etc未分類(lèi)制造商未分類(lèi)制造商

IT010A

ISOTABTRIACSELECTRICALLYISOLATED

[HUTSONINDUSTRIES]

ETC1List of Unclassifed Manufacturers

etc未分類(lèi)制造商未分類(lèi)制造商

IT010B

ISOTABTRIACSELECTRICALLYISOLATED

[HUTSONINDUSTRIES]

ETC1List of Unclassifed Manufacturers

etc未分類(lèi)制造商未分類(lèi)制造商

IT010HA

ISOTABTRIACSELECTRICALLYISOLATED

[HUTSONINDUSTRIES]

ETC1List of Unclassifed Manufacturers

etc未分類(lèi)制造商未分類(lèi)制造商

詳細(xì)參數(shù)

  • 型號(hào):

    IRFD010PBF

  • 功能描述:

    MOSFET N-Chan 50V 1.7 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
VishayIR
24+
4-DIP
1951
詢價(jià)
VISHAY
23+
DIP2
7750
全新原裝優(yōu)勢(shì)
詢價(jià)
IR
22+23+
DIP-4
16319
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價(jià)
VISHAY
20+
na
65790
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
詢價(jià)
VISHAY
1503+
DIP-4
3000
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
詢價(jià)
IR
22+
DIP-4
32350
原裝正品 假一罰十 公司現(xiàn)貨
詢價(jià)
IR
23+
DIP-4
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
IR
21+
DIP-4
10000
原裝現(xiàn)貨假一罰十
詢價(jià)
Vishay Siliconix
22+
4DIP
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
IR
2022
DIP-4
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價(jià)
更多IRFD010PBF供應(yīng)商 更新時(shí)間2024-10-24 16:30:00