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IRFD9120

Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-1.0A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?ForAutomaticInsertion ?En

IRF

International Rectifier

IRFD9120

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertiablecasestylewhichcanbestackedinmultiplecombina

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9120

1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET

ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc

Intersil

Intersil Corporation

IRFD9120

Power MOSFET

FEATURES ?Dynamicdv/dtrating ?Repetitiveavalancherated ?ForautomaticInsertion ?Endstackable ?P-channel ?175°Coperatingtemperature ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9120_V01

Power MOSFET

FEATURES ?Dynamicdv/dtrating ?Repetitiveavalancherated ?ForautomaticInsertion ?Endstackable ?P-channel ?175°Coperatingtemperature ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9120PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertiablecasestylewhichcanbestackedinmultiplecombina

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9120PBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFE9120

HEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET?TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignersth

IRF

International Rectifier

IRFE9120

P??HANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFE9120

SimpleDriveRequirements

IRF

International Rectifier

IRFE9120

MultipleSmall-SignalTransistors

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

IRFF9120

4A,100V,0.60Ohm,P-ChannelPowerMOSFET

4A,100V,0.60Ohm,P-ChannelPowerMOSFET ThisP-Channelenhancementmodesilicongatepowerfieldeffecttransistorisdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringh

Intersil

Intersil Corporation

IRFF9120

P-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

SEME-LAB

Seme LAB

IRFF9120

P-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFP9120

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR/U9120N

HEXFETPowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9120

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9120

5.6A,100V,0.600Ohm,P-ChannelPowerMOSFETs

TheseadvancedpowerMOSFETsaredesigned,tested,andguaranteedtowithstandaspecificlevelofenergyintheavalanchebreakdownmodeofoperation.TheyareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switching

Intersil

Intersil Corporation

IRFR9120

PowerMOSFET(Vdss=-100V,Rds(on)=0.60ohm,Id=-5.6A)

DESCRIPTION ThirdGenerationHEXFETsfromInternatioalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR9120) ?StraightLead

IRF

International Rectifier

IRFR9120

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

詳細(xì)參數(shù)

  • 型號：

    IRFD9120

  • 功能描述：

    MOSFET P-Chan 100V 1.0 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
23+
TO-220
12800
專注原裝正品現(xiàn)貨特價中量大可定
 詢價
VISHAY
11+
DIP4
600
原裝現(xiàn)貨 實單可談
 詢價
IR
24+
DIP4
4000
原裝原廠代理 可免費送樣品
 詢價
VS
23+
DIP
2600
原廠原裝正品
 詢價
SIL
2021+
DIP-4
6800
原廠原裝,歡迎咨詢
 詢價
VISHAY
2024+
DIP-4
32560
原裝優(yōu)勢絕對有貨
 詢價
IR
24+
N/A
8000
全新原裝正品,現(xiàn)貨銷售
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
SIL
92+
DIP-4
150
原裝
 詢價
IR
2015+
HEXDIP
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
更多IRFD9120供應(yīng)商 更新時間2024-12-24 16:34:00

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