IRFD9120中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書
廠商型號 |
IRFD9120 |
功能描述 | Power MOSFET |
文件大小 |
1.87503 Mbytes |
頁面數(shù)量 |
8 頁 |
生產(chǎn)廠商 | Vishay Siliconix |
企業(yè)簡稱 |
Vishay【威世科技】 |
中文名稱 | 威世科技半導(dǎo)體官網(wǎng) |
原廠標識 | |
數(shù)據(jù)手冊 | |
更新時間 | 2024-11-16 22:59:00 |
IRFD9120規(guī)格書詳情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combinations on standard 0.1 pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
FEATURES
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? For Automatic Insertion
? End Stackable
? P-Channel
? 175 °C Operating Temperature
? Fast Switching
? Lead (Pb)-free Available
產(chǎn)品屬性
- 型號:
IRFD9120
- 功能描述:
MOSFET P-Chan 100V 1.0 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
HARRIS/MOT |
23+ |
NA/ |
5171 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
IR |
2016+ |
DIP4 |
3000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
SILICONIX |
23+ |
DIP |
20000 |
全新原裝假一賠十 |
詢價 | ||
IR |
2020+ |
HD-1 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
IR |
2015+ |
HEXDIP |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
IR |
2020+ |
HEXDIP |
16800 |
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
SIX |
24+ |
2365 |
電源IC原裝正品有優(yōu)勢 |
詢價 | |||
Vishay Siliconix |
22+ |
4DIP |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IOR |
2016+ |
DIP4 |
6528 |
只做進口原裝現(xiàn)貨!假一賠十! |
詢價 | ||
23+ |
TO-220 |
12800 |
專注原裝正品現(xiàn)貨特價中量大可定 |
詢價 |