IRFD9110中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書
IRFD9110規(guī)格書詳情
This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Features
? 0.7A, 100V
? rDS(ON) = 1.200?
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
產(chǎn)品屬性
- 型號：
IRFD9110
- 功能描述：
MOSFET P-Chan 100V 0.7 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
HD-1 |
8000 |
原裝正品支持實單 |
詢價 | ||
VISHAY |
20+ |
na |
65790 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
IR |
21+ |
DIP-4 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
VISHAY/威世 |
21+ |
DIP |
6000 |
原裝正品 |
詢價 | ||
VISHAY/威世 |
23+ |
DIP |
10000 |
公司只做原裝正品 |
詢價 | ||
Vishay |
18+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應(yīng) |
詢價 | ||
IR |
21+ |
DIP4 |
9866 |
詢價 | |||
IR |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價優(yōu) |
詢價 | ||
IR |
DIP4 |
1235 |
優(yōu)勢庫存 |
詢價 | |||
IR |
1923+ |
DIP |
5689 |
原裝進口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨 |
詢價 |
