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IRFF430

2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFF430

HEXFET TRANSISTORS THRU-HOLE (TO-205AF)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtransistorsalsofe

IRF

International Rectifier

IRFF430

N??HANNEL ENHANCEMENT

FEATURES ?AVALANCHEENERGYRATED ?HERMETICALLYSEALED ?DYNAMICdv/dtRATING ?SIMPLEDRIVEREQUIREMENTS

SEME-LAB

Seme LAB

IRFF430

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

FEATURES ?AVALANCHEENERGYRATED ?HERMETICALLYSEALED ?DYNAMICdv/dtRATING ?SIMPLEDRIVEREQUIREMENTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFR430A

SMPSMOSFET

IRF

International Rectifier

IRFR430A

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR430A

PowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR430A

PowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR430A

PowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR430A

PowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR430A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR430A

PowerMOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalanche,anddynamic dV/dtruggedness ?Fullycharacterizedcapacitanceand avalanchevoltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance pleaseseewww

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR430APBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRFR430APBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR430APBF

PowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR430APBF

PowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR430APBF

PowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR430APBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR430ATR

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR430ATRA

PowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

詳細(xì)參數(shù)

  • 型號：

    IRFF430

  • 制造商：

    International Rectifier

  • 功能描述：

    Trans MOSFET N-CH 500V 2.5A 3-Pin TO-39

  • 功能描述：

    TRANS MOSFET N-CH 500V 2.5A 3PIN TO-39 - Bulk

  • 功能描述：

    Single N-Channel 500 V 25 W 29.5 nC Hexfet Transistor Through Hole - TO-39

  • 功能描述：

    N CH MOSFET, 500V, 2.5A, TO-205AF; Transistor

  • Polarity：

    N Channel; Continuous Drain Current

  • Id：

    2.5A; Drain Source Voltage

  • Vds：

    500V; On Resistance

  • Rds(on)：

    1.5ohm; Rds(on) Test Voltage

  • Vgs：

    10V; Threshold Voltage Vgs

  • Typ：

    4V ;RoHS

  • Compliant：

    No

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