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首頁 >IRFR/U9120N>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFR/U9120N	文件：3.88766 Mbytes Page：10 Pages	HEXFET Power MOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9120	文件：1.89003 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9120	文件：73.44 Kbytes Page：7 Pages	5.6A,100V,0.600Ohm,P-ChannelPowerMOSFETs TheseadvancedpowerMOSFETsaredesigned,tested,andguaranteedtowithstandaspecificlevelofenergyintheavalanchebreakdownmodeofoperation.TheyareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switching	Intersil Intersil Corporation	Intersil
IRFR9120	文件：173.05 Kbytes Page：6 Pages	PowerMOSFET(Vdss=-100V,Rds(on)=0.60ohm,Id=-5.6A) DESCRIPTION ThirdGenerationHEXFETsfromInternatioalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR9120) ?StraightLead	IRF International Rectifier	IRF
IRFR9120	文件：4.04661 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9120	文件：4.40688 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9120	文件：4.28393 Mbytes Page：7 Pages	DynamicdV/dtRating DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9120	文件：4.40685 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9120	文件：321.56 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFR9120	文件：1.18471 Mbytes Page：13 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR9120,SiHFR9120) ?Straightlead(IRFU9120,SiHFU9120) ?Availableintapeandreel ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9120	文件：1.6735 Mbytes Page：5 Pages	-100VP-ChannelEnhancementModeMOSFET GeneralFeatures Vbs=-100V,Ip=-8A Rosin)	UMWUMW Rightway Semiconductor Co., Ltd. 友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司(簡稱UMW?)	UMW
IRFR9120	文件：1.59396 Mbytes Page：5 Pages	-100VP-ChannelEnhancementModeMOSFET GeneralFeatures VDS=-100V,ID=-8A RDS(ON)	EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體	EVVOSEMI
IRFR9120N	文件：117.52 Kbytes Page：10 Pages	PowerMOSFET(Vdss=-100V,Rds(on)=0.48ohm,Id=-6.6A)	IRF International Rectifier	IRF
IRFR9120N	文件：883.59 Kbytes Page：10 Pages	UltraLowOn-Resistance Description TheD-Pakisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthrough-holemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications.	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9120N	文件：1.59396 Mbytes Page：5 Pages	-100VP-ChannelEnhancementModeMOSFET GeneralFeatures VDS=-100V,ID=-8A RDS(ON)	EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體	EVVOSEMI
IRFR9120N	文件：299.7 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-6.6A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.48Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFR9120NPBF	文件：262.32 Kbytes Page：11 Pages	HEXFETPowerMOSFET(VDSS=-100V,RDS(on)=0.48廓,ID=-6.6A) HEXFET?PowerMOSFET	IRF International Rectifier	IRF
IRFR9120NPBF	文件：263.29 Kbytes Page：11 Pages	ULTRALOWONRESISTANCE	IRF International Rectifier	IRF
IRFR9120NPBF	文件：3.85223 Mbytes Page：10 Pages	HEXFETPOWERMOSFET HEXFET?PowerMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9120NPBF	文件：3.87272 Mbytes Page：10 Pages	ULTRALOWON-RESISTANCE HEXFET?PowerMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI

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供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市河鋒鑫科技有限公司	IRFR/U9N20D	IR	22+	D-PAK/I-PAK	6000	終端可免費供樣,支持BOM配單	詢價
深圳市創(chuàng)新跡電子有限公司	IRFR/U9N20D	IR	23+	D-PAK/I-PAK	8000	專注配單,只做原裝進口現(xiàn)貨	詢價
深圳市安富世紀(jì)電子有限公司	IRFR/U9N20D	IR	23+	D-PAK/I-PAK	8000	只做原裝現(xiàn)貨	詢價
天津市博通航睿技術(shù)有限公司	IRFR/U9N20D	IR	23+	D-PAK/I-PAK	7000		詢價
深圳市昌和盛利電子有限公司	IRFR010	IR	23+	TO-252	35890		詢價
深圳市一線半導(dǎo)體有限公司	IRFR010	IR	24+	TO-3	200		詢價
深圳市勤思達科技有限公司	IRFR010	IR	1415+	TO-252	28500	全新原裝正品,優(yōu)勢熱賣	詢價
深圳市博浩通科技有限公司	IRFR010	IR	23+	原廠原裝	6000	全新原裝	詢價
深圳市星佑電子有限公司	IRFR010	IR	05+	原廠原裝	4355	只做全新原裝真實現(xiàn)貨供應(yīng)	詢價
深圳市弘為電子有限公司	IRFR010	IR	16+	原廠封裝	1836	原裝現(xiàn)貨假一罰十	詢價

更多IRFR/U9120N供應(yīng)商更新時間2024-11-15 14:00:00

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