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IRFR014

Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-Pakisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechni

IRF

International Rectifier

IRFR014

N-CHANNEL POWER MOSFET

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFR014

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR014

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR014

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Surface-mount(IRFR014,SiHFR014) ?Straightlead(IRFU014,SiHFU014) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR014

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR014

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR014

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR014_V01

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Surface-mount(IRFR014,SiHFR014) ?Straightlead(IRFU014,SiHFU014) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR014A

ADVANCED POWER MOSFET

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=60V ?LowerRDS(ON):0.097?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFR014

  • 功能描述：

    MOSFET N-Chan 60V 7.7 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR/VISHAY
SOT252
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
 詢價(jià)
IR
2020+
TO-252
8000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
IR
2021+
TO-252
9000
原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià)
 詢價(jià)
IR
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
IR
2015+
D-Pak
12500
全新原裝,現(xiàn)貨庫存長(zhǎng)期供應(yīng)
 詢價(jià)
IR
24+
TO-252
51200
新進(jìn)庫存/原裝
 詢價(jià)
IR
06+
TO-252
15000
原裝
 詢價(jià)
IR
24+
原廠封裝
147
原裝現(xiàn)貨假一罰十
 詢價(jià)
IRF
24+
TO-252
2560
絕對(duì)原裝!現(xiàn)貨熱賣!
 詢價(jià)
IR
17+
TO-252
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
更多IRFR014供應(yīng)商 更新時(shí)間2025-3-31 14:00:00

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