首頁 >IRFD9010PBF>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
PowerMOSFET DESCRIPTION ThepowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
P-CHANNELPOWERMOSFETS FEATURES ?LowerRDS(ON) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowerinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability | SamsungSamsung semiconductor 三星三星半導體 | Samsung | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET DESCRIPTION ThepowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
PowerMOSFET DESCRIPTION ThepowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
P-CHANNELPOWERMOSFETS FEATURES ?LowerRDS(ON) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowerinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability | SamsungSamsung semiconductor 三星三星半導體 | Samsung | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
ProtectiveCoverforTerminalBlocks
| PFBeijiafu (Beijing) Process Automation Control Equipment Co., Ltd 倍加福倍加福(北京)過程自動化控制設備有限公司 | PF | ||
M9336APXIeI/QArbitraryWaveformGenerator | KEYSIGHTKeysight Technologies 是德科技是德科技(中國)有限公司 | KEYSIGHT | ||
M9010APXIeChassis | KEYSIGHTKeysight Technologies 是德科技是德科技(中國)有限公司 | KEYSIGHT | ||
InterfaceModulesandAdaptersforPXIe | KEYSIGHTKeysight Technologies 是德科技是德科技(中國)有限公司 | KEYSIGHT | ||
SC70,5ns,Low-Power,Single-Supply,PrecisionTTLComparators GeneralDescription TheMAX9010/MAX9011/MAX9013singleandMAX9012dual,high-speedcomparatorsoperatefromasingle4.5Vto5.5Vpowersupplyandfeaturelow-currentconsumption.TheyhaveprecisiondifferentialinputsandTTLoutputs.Theyfeatureshortpropagationdelay(5ns,typ),low-supp | MaximMaxim Integrated Products 美信美信半導體 | Maxim | ||
SC70,5ns,Low-Power,Single-Supply,PrecisionTTLComparators GeneralDescription TheMAX9010/MAX9011/MAX9013singleandMAX9012dual,high-speedcomparatorsoperatefromasingle4.5Vto5.5Vpowersupplyandfeaturelow-currentconsumption.TheyhaveprecisiondifferentialinputsandTTLoutputs.Theyfeatureshortpropagationdelay(5ns,typ),low-supp | MaximMaxim Integrated Products 美信美信半導體 | Maxim |
詳細參數(shù)
- 型號:
IRFD9010PBF
- 功能描述:
MOSFET P-Chan 50V 1.1 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Vishay Siliconix |
24+ |
4-HVMDIP |
30000 |
晶體管-分立半導體產品-原裝正品 |
詢價 | ||
VISHAY(威世) |
23+ |
HVMDIP-4 |
7863 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
VishayIR |
24+ |
4-DIP |
1560 |
詢價 | |||
VISHAY |
23+ |
IPak |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
Vishay |
18+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應QQ3171516190 |
詢價 | ||
VishayPCS |
新 |
1826 |
全新原裝 貨期兩周 |
詢價 | |||
Vishay PCS |
2022+ |
1822 |
全新原裝 貨期兩周 |
詢價 | |||
VISHAY(威世) |
2117+ |
HVMDIP-4 |
315000 |
2500個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨, |
詢價 | ||
VISHAY |
1809+ |
DIP-4 |
3675 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
SILICONIXVISHAY |
21+ |
NA |
1729 |
只做原裝,一定有貨,不止網(wǎng)上數(shù)量,量多可訂貨! |
詢價 |
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