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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IRFD310PBF	文件：1.12454 Mbytes Page：8 Pages	HEXFET? Power MOSFET VDSS=400V RDS(on)=3.6? ID=0.35A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca	IRF International Rectifier	IRF
IRFD310PBF	文件：1.25725 Mbytes Page：8 Pages	Power MOSFET VDS(V)400 RDS(on)(Ω)VGS=10V3.6 Qg(Max.)(nC)17 Qgs(nC)3.4 Qgd(nC)8.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFE310	文件：146.18 Kbytes Page：7 Pages	HEXFETTRANSISTOR 400Volt,3.6?,HEXFET Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.TheLCCprovidesdesignerstheextraflexibilitytheyneedtoincreasecircuitboarddensity.InternationalRectifierhasengineeredtheLCCpacka	IRF International Rectifier	IRF
IRFE310	文件：173.28 Kbytes Page：7 Pages	SimpleDriveRequirements	IRF International Rectifier	IRF
IRFF310	文件：326.13 Kbytes Page：7 Pages	1.35A,400V,3.600Ohm,N-ChannelPowerMOSFET 1.35A,400V,3.600Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs	Intersil Intersil Corporation	Intersil
IRFF310	文件：129.419 Kbytes Page：7 Pages	REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET??RANSISTORSTHRU-HOLE(TO-205AF) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowonstateresistancecombinedwithhightransconductance.TheHEXFETtransistorsalsofea	IRF International Rectifier	IRF
IRFF310	文件：16.64 Kbytes Page：1 Pages	N-ChannelMOSFETinaHermeticallysealedTO39	SEME-LAB Seme LAB	SEME-LAB
IRFF310	文件：1.00373 Mbytes Page：3 Pages	1.35A,400V,3.600Ohm,N-ChannelPowerMOSFET 1.35A,400V,3.600Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
IRFR310	文件：173.78 Kbytes Page：6 Pages	PowerMOSFET(Vdss=400V,Rds(on)=3.6ohm,Id=1.7A)	IRF International Rectifier	IRF
IRFR310	文件：1.41713 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR310	文件：332.27 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IRFR310	文件：3.93235 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR310	文件：3.93309 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR310	文件：835 Kbytes Page：13 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR310,SiHFR310) ?Straightlead(IRFU310,SiHFU310) ?Availableintapeandreel ?Fastswitching ?Fullyavalancherated ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR310A	文件：224.83 Kbytes Page：7 Pages	AdvancedPowerMOSFET FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=400V ?LowRDS(ON):2.815?(Typ.)	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFR310A	文件：321.88 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IRFR310B	文件：647.4 Kbytes Page：9 Pages	400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFR310B	文件：674.94 Kbytes Page：9 Pages	400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR310B	文件：321.88 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IRFR310PBF	文件：1.41713 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay

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型號(hào)：
IRFD310PBF
功能描述：
MOSFET N-Chan 400V 0.35 Amp
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
中天科工半導(dǎo)體（深圳）有限公司	IRFD310PBF	Vishay Siliconix	24+	4-HVMDIP	30000	晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品	詢價(jià)
深圳市高捷芯城科技有限公司	IRFD310PBF	VISHAY(威世)	23+	HVMDIP-4	9555	支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。	詢價(jià)
深圳市昌和盛利電子有限公司	IRFD310PBF	IR	23+	HEXDIP	19526		詢價(jià)
深圳市一線半導(dǎo)體有限公司	IRFD310PBF	VishayIR	24+	4-DIP	187		詢價(jià)
深圳市博浩通科技有限公司	IRFD310PBF	VISHAY	23+	DIP2	7750	全新原裝優(yōu)勢(shì)	詢價(jià)
深圳市鵬和科技有限公司	IRFD310PBF	IR	24+	DIP4	5000	全現(xiàn)原裝公司現(xiàn)貨	詢價(jià)
深圳市達(dá)恩科技有限公司	IRFD310PBF	Vishay	18+	NA	3000	進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190	詢價(jià)
深圳市永貝爾科技有限公司	IRFD310PBF	IRF	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
深圳市華來(lái)深電子有限公司	IRFD310PBF	IR	23+	DIP4	8560	受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!	詢價(jià)
深圳市華斯頓科技有限公司	IRFD310PBF	IR	22+23+	DIP4	45146	絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨	詢價(jià)

更多IRFD310PBF供應(yīng)商更新時(shí)間2025-1-6 16:28:00

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