首頁 >IRFD420PBF>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFD420PBF | Power MOSFET VDS(V)500 RDS(on)(Ω)VGS=10V3.0 Qg(Max.)(nC)24 Qgs(nC)3.3 Qgd(nC)13 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
IRFD420PBF | Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORS REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesigners | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
1.6A,500V,3.000Ohm,N-ChannelPowerMOSFET 1.6A,500V,3.000Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa | Intersil Intersil Corporation | Intersil | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
2.5A,500V,3.000Ohm,N-ChannelPowerMOSFETs 2.5A,500V,3.000Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Allofthesepow | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET(Vdss=500V,Rds(on)=3.0ohm,Id=2.4A) Description ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes | IRF International Rectifier | IRF | ||
DynamicdV/dtRating DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
詳細參數(shù)
- 型號:
IRFD420PBF
- 功能描述:
MOSFET N-Chan 400V 0.37 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Vishay Siliconix |
24+ |
4-HVMDIP |
30000 |
晶體管-分立半導體產(chǎn)品-原裝正品 |
詢價 | ||
VISHAY |
21+ |
4-DIP |
8100 |
原裝正品 有掛有貨 |
詢價 | ||
VISHAY |
21+/19+/22+ |
12600 |
4-DIP |
詢價 | |||
VISHAY |
21+ |
4-DIP |
9800 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價 | ||
Vishay(威世) |
2249+ |
58614 |
二十余載金牌老企 研究所優(yōu)秀合供單位 您的原廠窗口 |
詢價 | |||
VISHAY(威世) |
23+ |
HVMDIP |
7863 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
VISHAY |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
VishayIR |
24+ |
4-DIP |
1609 |
詢價 | |||
VISHAY |
23+ |
DIP2 |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
VishayPCS |
新 |
5 |
全新原裝 貨期兩周 |
詢價 |
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