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IRFBE20

Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.8A)

Description ThirdGenerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissi

IRF

International Rectifier

IRFBE20

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBE20

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBE20PBF

HEXFET Power MOSFET

Description ThirdGenerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissi

IRF

International Rectifier

IRFBE20PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBE20PBF

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=1.8A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRITION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFBE20_V01

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBE20PBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBE20PBF-BE3

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRFBE20

  • 功能描述：

    MOSFET 800V Single N-Channel HEXFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
24+
TO-220
2685
只做原廠渠道 可追溯貨源
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
06+
TO-220
6000
自己公司全新庫存絕對有貨
 詢價
IR
2015+
TO-220
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
IR
23+
TO-220
19526
詢價
IR
24+
TO-220
98
詢價
IR
24+
TO-200
4650
詢價
IR
2015+
TO-220AB
12500
全新原裝,現(xiàn)貨庫存長期供應(yīng)
 詢價
IR
23+
TO-220AB
8600
全新原裝現(xiàn)貨
 詢價
VISHAY/IR
24+
原廠封裝
5950
原裝現(xiàn)貨假一罰十
 詢價
更多IRFBE20供應(yīng)商 更新時間2025-3-15 16:36:00

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