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IRFBC40

N - CHANNEL 600V - 1.0ohm - 6.2 A - TO-220 PowerMESH] MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=1.0? ■EXTREMELYHIGHdv/dtCAPABILITY ■100A

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

IRFBC40

6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFBC40

Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A)

SMPSMOSFET Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,AvalancheandDynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) Applications ●SwitchModePowerSu

IRF

International Rectifier

IRFBC40

6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors. Features ?6.2Aand5.4A,600V ?rDS(ON)=1.2?and1.6? ?RepetitiveAvalancheEnergyRated ?SimpleDriveRequirements ?EaseofParalleling ?RelatedLiterature -TB334,“Guidelinesf

HARRIS

Harris Corporation

IRFBC40

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

KERSEMI

Kersemi Electronic Co., Ltd.

IRFBC40

CURRENT-MODE-PWM CONTROLLER

TI1Texas Instruments

德州儀器

IRFBC40

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRFBC40

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFBC40

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFBC40

iscN-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    IRFBC40

  • 功能描述：

    MOSFET N-Chan 600V 6.2 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
23+
TO-220
2840
原廠原裝正品
 詢價
IR
18+
TO-220
50
只做原裝正品
 詢價
IR
24+
TO 220
161082
明嘉萊只做原裝正品現(xiàn)貨
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
05+
TO-220
10000
全新原裝 絕對有貨
 詢價
IR
13+
TO-220
2178
原裝分銷
 詢價
IR
2015+
SOP/DIP
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
IR
23+
TO-263
1200
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購!
 詢價
IR
23+
TO-220
9896
詢價
IR
12+
TO-263
15000
全新原裝,絕對正品,公司現(xiàn)貨供應。
 詢價
更多IRFBC40供應商 更新時間2025-3-1 11:19:00

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