首頁 >HY57V561620T-S>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
HY57V561620T-S | 4Banks x 4M x 16Bit Synchronous DRAM TheHY57V561620Tisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620isorganizedas4banksof4,194,304x16. TheHY57V561620Tisofferingfullysynchronousoperationreferencedtoapo | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | |
4Banksx4Mx16BitSynchronousDRAM TheHY57V561620Tisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620isorganizedas4banksof4,194,304x16. TheHY57V561620Tisofferingfullysynchronousoperationreferencedtoapo | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix |
詳細(xì)參數(shù)
- 型號:
HY57V561620T-S
- 制造商:
HYNIX
- 制造商全稱:
Hynix Semiconductor
- 功能描述:
4Banks x 4M x 16Bit Synchronous DRAM
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
HYUNDAI |
2023+ |
TSOP |
3625 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價(jià) | ||
HYUNDAI |
2023+ |
SMD |
16802 |
安羅世紀(jì)電子只做原裝正品貨 |
詢價(jià) | ||
HY |
2022 |
SOP |
3080 |
原裝正品 |
詢價(jià) | ||
HYNIX/海力士 |
2021+ |
TSOP-66 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價(jià) | ||
HYNIX/海力士 |
23+ |
TSOP54 |
3929 |
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價(jià) | ||
HY |
20+ |
TSOP |
11520 |
特價(jià)全新原裝公司現(xiàn)貨 |
詢價(jià) | ||
HY |
TSOP54 |
0734+ |
4600 |
全新原裝進(jìn)口自己庫存優(yōu)勢 |
詢價(jià) | ||
ALLIANCE |
18+ |
TSOP |
85600 |
保證進(jìn)口原裝可開17%增值稅發(fā)票 |
詢價(jià) | ||
HYNIX |
2016+ |
TSOP |
8880 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價(jià) | ||
HYNIX |
1815+ |
tsop |
6528 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!! |
詢價(jià) |
相關(guān)規(guī)格書
更多- HY57V561620T-SI
- HY57V56420ALT-6
- HY57V56420ALT-H
- HY57V56420ALT-S
- HY57V56420AT-6
- HY57V56420AT-H
- HY57V56820BL
- HY57V56820BLT-6
- HY57V56820BLT-H
- HY57V56820BLT-P
- HY57V56820BT
- HY57V56820BT-8
- HY57V56820BT-K
- HY57V56820BT-S
- HY57V56820CLT-6
- HY57V56820CLT-H
- HY57V56820CLT-P
- HY57V56820CT
- HY57V56820CT-8
- HY57V56820CT-K
- HY57V56820CT-S
- HY57V56820HLT-6
- HY57V56820HLT-H
- HY57V56820HLT-P
- HY57V56820HT
- HY57V56820HT-8
- HY57V641620ELTP-6
- HY57V641620ELTP-H
- HY57V641620ESTP-6
- HY57V641620ESTP-H
- HY57V641620ET-5
- HY57V641620FTP-6-C
- HY57V641620FTP-7DR-C
- HY57V641620FTP-HI-C
- HY57V641620HG
- HY57V641620HGLT-5
- HY57V641620HGLT-55I
- HY57V641620HGLT-6
- HY57V641620HGLT-7
- HY57V641620HGLT-8
- HY57V641620HGT-5
- HY57V641620HGT-55I
- HY57V641620HGT6
- HY57V641620HGT-6I
- HY57V641620HGT-7I
相關(guān)庫存
更多- HY57V56420ALT-10
- HY57V56420ALT-8
- HY57V56420ALT-P
- HY57V56420AT-10
- HY57V56420AT-8
- HY57V56820B
- HY57V56820BLT
- HY57V56820BLT-8
- HY57V56820BLT-K
- HY57V56820BLT-S
- HY57V56820BT-6
- HY57V56820BT-H
- HY57V56820BT-P
- HY57V56820CLT
- HY57V56820CLT-8
- HY57V56820CLT-K
- HY57V56820CLT-S
- HY57V56820CT-6
- HY57V56820CT-H
- HY57V56820CT-P
- HY57V56820HLT
- HY57V56820HLT-8
- HY57V56820HLT-K
- HY57V56820HLT-S
- HY57V56820HT-6
- HY57V641620ELTP-5
- HY57V641620ELTP-7
- HY57V641620ESTP-5
- HY57V641620ESTP-7
- HY57V641620ET
- HY57V641620ET-H
- HY57V641620FTP-6DR-C
- HY57V641620FTP-H-C
- HY57V641620FTP-HIDR-C
- HY57V641620HG-I
- HY57V641620HGLT-55
- HY57V641620HGLT-5I
- HY57V641620HGLT-6I
- HY57V641620HGLT-7I
- HY57V641620HGLT-8I
- HY57V641620HGT-55
- HY57V641620HGT-5I
- HY57V641620HGT-6
- HY57V641620HGT-7
- HY57V641620HGT-8