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HY57V561620BT-HI

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620BT-I

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620BT-KI

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620BT-PI

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620BT-SI

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620C

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620CLT-H

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620CLT-K

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620CLT-P

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620CLTP-H

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620CLTP-K

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620CLTP-P

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620CLTP-S

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620CLT-S

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620CT-H

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620CT-K

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620CT-P

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620CTP-H

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620CTP-K

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620CTP-P

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

詳細參數(shù)

  • 型號:

    HY57V561620BT-HI

  • 制造商:

    HYNIX

  • 制造商全稱:

    Hynix Semiconductor

  • 功能描述:

    4 Banks x 4M x 16Bit Synchronous DRAM

供應(yīng)商型號品牌批號封裝庫存備注價格
HYNIX/海力士
2022+
TSOP54
12680
全新原裝 正品現(xiàn)貨 誠信經(jīng)營 終生質(zhì)保
詢價
HYNIX/海力士
24+
TSOP54
8000
全新原裝現(xiàn)貨
詢價
HYNIX
15+
TSOP54
36
原裝正品
詢價
HY
24+
TSOP
6980
原裝現(xiàn)貨,可開13%稅票
詢價
HYNIX
19+
256800
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價
HY
20+
TSOP
11520
特價全新原裝公司現(xiàn)貨
詢價
HYNIX
24+
TSOP
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!
詢價
HYNIX
24+
TSOP54
960
原裝現(xiàn)貨
詢價
HYNIX
23+
TSOP54
3000
原裝正品假一罰百!可開增票!
詢價
HYNIX
23+
TSOP
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
更多HY57V561620BT-HI供應(yīng)商 更新時間2024-12-29 9:20:00