首頁 >HY57V561620BT-HI>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
HY57V561620BT-HI | 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | |
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4Banksx4Mx16BitSynchronousDRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix |
詳細參數(shù)
- 型號:
HY57V561620BT-HI
- 制造商:
HYNIX
- 制造商全稱:
Hynix Semiconductor
- 功能描述:
4 Banks x 4M x 16Bit Synchronous DRAM
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
HYNIX/海力士 |
2022+ |
TSOP54 |
12680 |
全新原裝 正品現(xiàn)貨 誠信經(jīng)營 終生質(zhì)保 |
詢價 | ||
HYNIX/海力士 |
24+ |
TSOP54 |
8000 |
全新原裝現(xiàn)貨 |
詢價 | ||
HYNIX |
15+ |
TSOP54 |
36 |
原裝正品 |
詢價 | ||
HY |
24+ |
TSOP |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
HYNIX |
19+ |
256800 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價 | |||
HY |
20+ |
TSOP |
11520 |
特價全新原裝公司現(xiàn)貨 |
詢價 | ||
HYNIX |
24+ |
TSOP |
16800 |
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢! |
詢價 | ||
HYNIX |
24+ |
TSOP54 |
960 |
原裝現(xiàn)貨 |
詢價 | ||
HYNIX |
23+ |
TSOP54 |
3000 |
原裝正品假一罰百!可開增票! |
詢價 | ||
HYNIX |
23+ |
TSOP |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 |
相關(guān)規(guī)格書
更多- HY57V561620BT-I
- HY57V561620BT-PI
- HY57V561620C
- HY57V561620CLT-6
- HY57V561620CLT-8
- HY57V561620CLT-K
- HY57V561620CLTP-6
- HY57V561620CLTP-8
- HY57V561620CLTP-P
- HY57V561620CLT-S
- HY57V561620CT-6
- HY57V561620CT-8
- HY57V561620CT-K
- HY57V561620CTP-6
- HY57V561620CTP-8
- HY57V561620CTP-K
- HY57V561620CTP-S
- HY57V561620FTP-6IDR-C
- HY57V561620FTP-HDR-C
- HY57V561620FTP-HIDR-C
- HY57V561620HLT-6
- HY57V561620HLT-H
- HY57V561620HLT-P
- HY57V561620HT
- HY57V561620LT-H
- HY57V561620LT-HP
- HY57V561620LT-P
- HY57V561620LT-SI
- HY57V561620T-10
- HY57V561620T-H
- HY57V561620T-HP
- HY57V561620T-S
- HY57V56420ALT-10
- HY57V56420ALT-8
- HY57V56420ALT-P
- HY57V56420AT-10
- HY57V56420AT-8
- HY57V56820B
- HY57V56820BLT
- HY57V56820BLT-8
- HY57V56820BLT-K
- HY57V56820BLT-S
- HY57V56820BT-6
- HY57V56820BT-H
- HY57V56820BT-P
相關(guān)庫存
更多- HY57V561620BT-KI
- HY57V561620BT-SI
- HY57V561620CLT
- HY57V561620CLT-7
- HY57V561620CLT-H
- HY57V561620CLT-P
- HY57V561620CLTP-7
- HY57V561620CLTP-K
- HY57V561620CLTP-S
- HY57V561620CT
- HY57V561620CT-7
- HY57V561620CT-H
- HY57V561620CT-P
- HY57V561620CTP-7
- HY57V561620CTP-H
- HY57V561620CTP-P
- HY57V561620CT-S
- HY57V561620FTP-H
- HY57V561620FTP-HI-C
- HY57V561620HLT
- HY57V561620HLT-8
- HY57V561620HLT-K
- HY57V561620HLT-S
- HY57V561620LT-8
- HY57V561620LT-HI
- HY57V561620LT-I
- HY57V561620LT-S
- HY57V561620T
- HY57V561620T-8
- HY57V561620T-HI
- HY57V561620T-P
- HY57V561620T-SI
- HY57V56420ALT-6
- HY57V56420ALT-H
- HY57V56420ALT-S
- HY57V56420AT-6
- HY57V56420AT-H
- HY57V56820BL
- HY57V56820BLT-6
- HY57V56820BLT-H
- HY57V56820BLT-P
- HY57V56820BT
- HY57V56820BT-8
- HY57V56820BT-K
- HY57V56820BT-S