首頁 >HY57V561620C>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
HY57V561620C | 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | |
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix |
詳細(xì)參數(shù)
- 型號：
HY57V561620C
- 制造商：
HYNIX
- 制造商全稱：
Hynix Semiconductor
- 功能描述：
4 Banks x 4M x 16Bit Synchronous DRAM
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
HUNIX |
18+ |
SSOP |
85600 |
保證進(jìn)口原裝可開17%增值稅發(fā)票 |
詢價 | ||
HY |
23+ |
TSSOP |
7000 |
絕對全新原裝!現(xiàn)貨!特價!請放心訂購! |
詢價 | ||
HYNIX |
2016+ |
TSOP54 |
960 |
只做原裝,假一罰十,公司優(yōu)勢內(nèi)存型號! |
詢價 | ||
HYNIX |
22+ |
TSSOP |
2500 |
詢價 | |||
HYNIX |
2015+ |
SOP/DIP |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
TOS |
23+ |
WSO-18 |
9526 |
詢價 | |||
HY |
06+ |
TSOP |
1000 |
自己公司全新庫存絕對有貨 |
詢價 | ||
HYNIX |
15+ |
TSSOP |
11560 |
全新原裝,現(xiàn)貨庫存,長期供應(yīng) |
詢價 | ||
HYNIX |
17+ |
TSOP |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
HYNIX |
23+ |
TSOP54 |
5000 |
原裝正品,假一罰十 |
詢價 |
相關(guān)規(guī)格書
更多- HY57V561620CLT
- HY57V561620CLT-7
- HY57V561620CLT-H
- HY57V561620CLT-P
- HY57V561620CLTP-7
- HY57V561620CLTP-K
- HY57V561620CLTP-S
- HY57V561620CT
- HY57V561620CT-7
- HY57V561620CT-H
- HY57V561620CT-P
- HY57V561620CTP-7
- HY57V561620CTP-H
- HY57V561620CTP-P
- HY57V561620CT-S
- HY57V561620FTP-H
- HY57V561620FTP-HI-C
- HY57V561620HLT
- HY57V561620HLT-8
- HY57V561620HLT-K
- HY57V561620HLT-S
- HY57V561620LT-8
- HY57V561620LT-HI
- HY57V561620LT-I
- HY57V561620LT-S
- HY57V561620T
- HY57V561620T-8
- HY57V561620T-HI
- HY57V561620T-P
- HY57V561620T-SI
- HY57V56420ALT-6
- HY57V56420ALT-H
- HY57V56420ALT-S
- HY57V56420AT-6
- HY57V56420AT-H
- HY57V56820BL
- HY57V56820BLT-6
- HY57V56820BLT-H
- HY57V56820BLT-P
- HY57V56820BT
- HY57V56820BT-8
- HY57V56820BT-K
- HY57V56820BT-S
- HY57V56820CLT-6
- HY57V56820CLT-H
相關(guān)庫存
更多- HY57V561620CLT-6
- HY57V561620CLT-8
- HY57V561620CLT-K
- HY57V561620CLTP-6
- HY57V561620CLTP-8
- HY57V561620CLTP-P
- HY57V561620CLT-S
- HY57V561620CT-6
- HY57V561620CT-8
- HY57V561620CT-K
- HY57V561620CTP-6
- HY57V561620CTP-8
- HY57V561620CTP-K
- HY57V561620CTP-S
- HY57V561620FTP-6IDR-C
- HY57V561620FTP-HDR-C
- HY57V561620FTP-HIDR-C
- HY57V561620HLT-6
- HY57V561620HLT-H
- HY57V561620HLT-P
- HY57V561620HT
- HY57V561620LT-H
- HY57V561620LT-HP
- HY57V561620LT-P
- HY57V561620LT-SI
- HY57V561620T-10
- HY57V561620T-H
- HY57V561620T-HP
- HY57V561620T-S
- HY57V56420ALT-10
- HY57V56420ALT-8
- HY57V56420ALT-P
- HY57V56420AT-10
- HY57V56420AT-8
- HY57V56820B
- HY57V56820BLT
- HY57V56820BLT-8
- HY57V56820BLT-K
- HY57V56820BLT-S
- HY57V56820BT-6
- HY57V56820BT-H
- HY57V56820BT-P
- HY57V56820CLT
- HY57V56820CLT-8
- HY57V56820CLT-K
