首頁 >HY57V561620B>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
HY57V561620B | 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | |
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa | HynixHynix Semiconductor 海力士海力士半導(dǎo)體 | Hynix |
詳細(xì)參數(shù)
- 型號:
HY57V561620B
- 制造商:
HYNIX
- 制造商全稱:
Hynix Semiconductor
- 功能描述:
4 Banks x 4M x 16Bit Synchronous DRAM
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
HYNIX |
24+ |
TSOP-54 |
4650 |
詢價 | |||
HYN |
2003 |
16 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
HY |
06+ |
TSOP |
1000 |
全新原裝 絕對有貨 |
詢價 | ||
24+ |
TSOP |
25 |
詢價 | ||||
HYNIX |
15+ |
11560 |
全新原裝,現(xiàn)貨庫存,長期供應(yīng) |
詢價 | |||
HYUNDAI |
99+ |
TSOP54 |
3560 |
全新原裝進(jìn)口自己庫存優(yōu)勢 |
詢價 | ||
HINIX |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價優(yōu) |
詢價 | ||
HYINX |
23+ |
TSOP |
2214 |
特價庫存 |
詢價 | ||
HYNIX |
2020+ |
TSSOP |
40 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
HY |
24+ |
TSOP |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 |
相關(guān)規(guī)格書
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