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IRFBL10N60A

HEXFETPowerMOSFET

IRF

International Rectifier

IXFA10N60P

PolarHiPerFETPowerMOSFET

Polar3?HiPerFET?PowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?InternationalStandardPackages ?FastIntrinsicRectifier ?AvalancheRated ?LowRDS(ON)andQG ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?S

IXYS

IXYS Corporation

IXFA10N60P

PowerMOSFET

IXYS

IXYS Corporation

IXFA10N60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=740mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFH10N60

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM10N60

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM10N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFP10N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.74Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFP10N60P

PolarHiPerFETPowerMOSFET

Polar3?HiPerFET?PowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?InternationalStandardPackages ?FastIntrinsicRectifier ?AvalancheRated ?LowRDS(ON)andQG ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?S

IXYS

IXYS Corporation

IXFP10N60P

PowerMOSFET

IXYS

IXYS Corporation

IXFP10N60P

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=740mΩ(Max)@VGS=10V APPLICATIONS ·Switching ·DC-DCConverters

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXGA10N60

LowVCE(sat)IGBT,HighspeedIGBT

IXYS

IXYS Corporation

IXGA10N60A

LowVCE(sat)IGBT,HighspeedIGBT

IXYS

IXYS Corporation

IXGH10N60

LowVCE(sat)IGBT,HighspeedIGBT

IXYS

IXYS Corporation

IXGH10N60A

LowVCE(sat)IGBT,HighspeedIGBT

IXYS

IXYS Corporation

IXGP10N60

LowVCE(sat)IGBT,HighspeedIGBT

IXYS

IXYS Corporation

IXGP10N60A

LowVCE(sat)IGBT,HighspeedIGBT

IXYS

IXYS Corporation

IXSH10N60

HighSpeedIGBT-ShortCircuitSOACapability

IXYS

IXYS Corporation

IXSH10N60A

HighSpeedIGBT-ShortCircuitSOACapability

IXYS

IXYS Corporation

IXTA10N60P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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IR
22+
TO220
6000
終端可免費(fèi)供樣,支持BOM配單
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IR
23+
TO220
8000
只做原裝現(xiàn)貨
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IR
23+
TO220
7000
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IR
21+
TO220
10000
原裝現(xiàn)貨假一罰十
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IR
23+
NA/
16383
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
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IR
24+
TO220
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!
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IR
23+
TO220
50000
全新原裝正品現(xiàn)貨,支持訂貨
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IR
2022
TO220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
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IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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IR
22+
TO-220
15000
絕對(duì)全新原裝現(xiàn)貨
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更多IRFB10N60N供應(yīng)商 更新時(shí)間2025-1-10 14:00:00