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IRFD9220

Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-0.56A)

HEXFETPowerMOSFET ●DynamicdV/dtRating ●RepetitiveAvalancheRated ●ForAutomaticInsertion ●EndStackable ●P-Channel ●FastSwitching ●EaseofParalleling

IRF

International Rectifier

IRFD9220

0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFD9220

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9220PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9220PBF

HEXFET Power MOSFET

HEXFETPowerMOSFET ●DynamicdV/dtRating ●RepetitiveAvalancheRated ●ForAutomaticInsertion ●EndStackable ●P-Channel ●FastSwitching ●EaseofParalleling ●Lead-Free

IRF

International Rectifier

IRFE9220

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerstheextraflexibilitytheyneedtoincreasecircuitboarddensity.InternationalRe

IRF

International Rectifier

IRFE9220

SimpleDriveRequirements

IRF

International Rectifier

IRFF9220

P-ChannelMOSFETinaHermeticallysealedTO39

SEME-LAB

Seme LAB

IRFF9220

-2.5A,-200V,1.5Ohm,P-ChannelPowerMOSFETs

-2.5A,-200V,1.5Ohm,P-ChannelPowerMOSFETs TheseareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheyareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforappl

Intersil

Intersil Corporation

IRFF9220

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET??RANSISTORSTHRU-HOLE(TO-205AF)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. Features: ■RepetitiveAvala

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFD9220

  • 功能描述：

    MOSFET P-Chan 200V 0.56 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
2015+
HEXDIP
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣(mài)!
 詢(xún)價(jià)
HARRIS
05+
原廠原裝
4266
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢(xún)價(jià)
IR
23+
DIP-4
9896
詢(xún)價(jià)
IR
23+
DIP
8000
全新原裝現(xiàn)貨
 詢(xún)價(jià)
IOR
24+
DIP-4P
42
詢(xún)價(jià)
IR
24+
原廠封裝
3000
原裝現(xiàn)貨假一罰十
 詢(xún)價(jià)
IR
2018+
DIP4
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫(kù)存放心
 詢(xún)價(jià)
IOR
95+
DIP-4
11
原裝現(xiàn)貨海量庫(kù)存歡迎咨詢(xún)
 詢(xún)價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢(xún)價(jià)
IR
22+23+
DIP
25684
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢(xún)價(jià)
更多IRFD9220供應(yīng)商 更新時(shí)間2025-3-16 9:00:00

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