IRFD9220中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書
IRFD9220規(guī)格書詳情
This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Features
? 0.6A, 200V
? rDS(ON) = 1.500?
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
產(chǎn)品屬性
- 型號(hào)：
IRFD9220
- 功能描述：
MOSFET P-Chan 200V 0.56 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
7770 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票 |
詢價(jià) | ||
IR |
20+ |
DIP4 |
35830 |
原裝優(yōu)勢主營型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) | ||
VISHAY |
NA |
16355 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢長期供貨 |
詢價(jià) | |||
IR |
08+ |
DIP4 |
3820 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
IR |
23+ |
DIP |
8000 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
08+ |
DIP4 |
4520 |
詢價(jià) | |||
VISHAY/威世 |
2022+ |
HVMDIP-4(HEXDIP-4) |
8000 |
只做原裝支持實(shí)單,有單必成。 |
詢價(jià) | ||
IR |
2018+ |
DIP4 |
6528 |
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心 |
詢價(jià) | ||
Vishay Siliconix |
22+ |
4DIP |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
IR |
22+ |
DIP4 |
25000 |
只做原裝,一站式BOM配單,假一罰十 |
詢價(jià) |
