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IRF1010ZSPBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRF1010ZSPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFI1010

PowerMOSFET(Vdss=55V,Rds(on)=0.012ohm,Id=49A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFI1010N

PowerMOSFET(Vdss=55V,Rds(on)=0.012ohm,Id=49A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFI1010N

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplication

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFI1010NPBF

HEXFET?PowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFI1010NPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRFR/U1010Z

AdvancedProcessTechnology

Description SpecificallydesignedforAutomotiveapplications,thisMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetiti

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR1010Z

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp

IRF

International Rectifier

IRFR1010Z

AdvancedProcessTechnology

Description SpecificallydesignedforAutomotiveapplications,thisMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetiti

KERSEMI

Kersemi Electronic Co., Ltd.

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF1010ZSHR

  • 制造商：

    International Rectifier

  • 功能描述：

    Trans MOSFET N-CH 55V 94A 3-Pin(2+Tab) D2PAK

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24+
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3000
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IRF
23+
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19960
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IR
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11846
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IR
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IR
24+
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90000
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International Rectifier
2022+
1
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IR
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TO-263
50000
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INFINEON
1503+
TO-263
3000
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
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Infineon
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NA
2118
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IR
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50000
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更多IRF1010ZSHR供應(yīng)商 更新時(shí)間2025-2-21 14:15:00

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