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IRF132

N-CHANNEL POWER MOSFETS

FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF132

N-Channel Power MOSFETs, 20 A, 60-100 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpower,supplies,UPS,ACandDCmotorcontrol,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF132

High Power,High Speed Applications

DESCRIPTION ?DrainCurrentID=12A@TC=25℃ ?DrainSourceVoltage-:VDSS=100V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=0.25Ω(Max) ?HighPower,HighSpeedApplications APPLICATIONS ?Switchingpowersupplies ?UPS ?Motorcontrols ?Highenergypulsecircuits.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF1324

N-Channel MOSFET Transistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤1.5m? ?Enhancementmode: ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF1324LPBF

HEXFET Power MOSFET

Benefits ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability ?Lead-Free Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPow

IRF

International Rectifier

IRF1324PBF

HEXFETPower MOSFET

Benefits ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability ?Lead-Free Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPowe

IRF

International Rectifier

IRF1324S-7PPBF

HEXFET Power MOSFET

Benefits ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability ?Lead-Free Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPow

IRF

International Rectifier

IRF1324S-7PPBF

High Efficiency Synchronous Rectification in SMPS

Benefits ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability ?Lead-Free Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPow

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRF1324SPBF

HEXFET Power MOSFET

Benefits ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability ?Lead-Free Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPow

IRF

International Rectifier

IRF1324STRL-7PP

High Efficiency Synchronous Rectification in SMPS

Benefits ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability ?Lead-Free Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPow

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF132

  • 制造商：

    SAMSUNG

  • 制造商全稱：

    Samsung semiconductor

  • 功能描述：

    N-CHANNEL POWER MOSFETS

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
24+
TO-3
10000
詢價(jià)
INR
23+
TO-3
5000
原裝正品,假一罰十
 詢價(jià)
IR
2015+
TO-3(鐵帽)
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
 詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IR/MOT
專業(yè)鐵帽
TO-3
1500
原裝鐵帽專營(yíng),代理渠道量大可訂貨
 詢價(jià)
IR
23+
65480
詢價(jià)
IR/MOT
專業(yè)鐵帽
TO-3
67500
鐵帽原裝主營(yíng)-可開原型號(hào)增稅票
 詢價(jià)
IRF132
600
600
詢價(jià)
CHINA
22+
SMD-0.5TO-39TO-257
640
航宇科工半導(dǎo)體-央企合格優(yōu)秀供方!
 詢價(jià)
IR
22+
TO-3
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
更多IRF132供應(yīng)商 更新時(shí)間2025-1-22 16:30:00

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