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IRFI1010NPBF中文資料IRF數據手冊PDF規(guī)格書
IRFI1010NPBF規(guī)格書詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
● Advanced Process Technology
● Isolated Package
● High Voltage Isolation = 2.5KVRMS ?
● Sink to Lead Creepage Dist. = 4.8mm
● Fully Avalanche Rated
● Lead-Free
產品屬性
- 型號：
IRFI1010NPBF
- 功能描述：
MOSFET MOSFT 55V 44A 12mOhm 86.7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220-3 |
879 |
詢價 | |||
IR |
12+ |
TO-220 |
84 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
Infineon/英飛凌 |
23+ |
TO-220(TO-220-3) |
25000 |
原裝正品,假一賠十! |
詢價 | ||
IR |
23+ |
NA/ |
3294 |
原裝現貨,當天可交貨,原型號開票 |
詢價 | ||
Infineon/英飛凌 |
2022+ |
TO-220(TO-220-3) |
48000 |
只做原裝,原裝,假一罰十 |
詢價 | ||
Infineon Technologies |
22+ |
TO2203 |
9000 |
原廠渠道,現貨配單 |
詢價 | ||
Infineon Technologies |
21+ |
TO2203 |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
IR |
23+ |
TO-220-3 |
11846 |
一級代理商現貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
Infineon/英飛凌 |
24+ |
TO-220(TO-220-3) |
7188 |
秉承只做原裝 終端我們可以提供技術支持 |
詢價 | ||
IR |
23+ |
TO-220F |
8238 |
詢價 |
