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HY57V561620B

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620BLT-HI

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620BLT-KI

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620BLT-PI

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620BLT-SI

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620BT-HI

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620BT-I

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620BT-KI

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620BT-PI

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620BT-SI

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620C

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620CLT-H

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620CLT-K

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620CLT-P

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620CLTP-H

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620CLTP-K

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620CLTP-P

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620CLTP-S

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620CLT-S

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY57V561620CT-H

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

詳細(xì)參數(shù)

  • 型號:

    HY57V561620ALT-S

  • 功能描述:

    x16 SDRAM

供應(yīng)商型號品牌批號封裝庫存備注價格
HYNIX
24+
TSOP-54
4650
詢價
專營HYNIX
23+
TSOP54
3925
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
詢價
HYNIX
2023+
TSOP
50000
原裝現(xiàn)貨
詢價
HY
23+
TSOP54
1122
專業(yè)優(yōu)勢供應(yīng)
詢價
HYUNDAI
99+
TSOP54
3560
全新原裝進(jìn)口自己庫存優(yōu)勢
詢價
HYUNDAI
17+
TSOP54
9988
只做原裝進(jìn)口,自己庫存
詢價
HY
24+
TSOP-54
8
詢價
HY
24+
TSOP
6980
原裝現(xiàn)貨,可開13%稅票
詢價
HYNIX
TSSOP54
10265
提供BOM表配單只做原裝貨值得信賴
詢價
HY
23+
TSOP-54
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
詢價
更多HY57V561620ALT-S供應(yīng)商 更新時間2024-12-31 17:07:00