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HGTP12N60C3

24A, 600V, UFS Series N-Channel IGBTs

TheHGTP12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTP12N60C3

24A, 600V, UFS Series N-Channel IGBTs

TheHGTP12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

Intersil

Intersil Corporation

HGTP12N60C3

24A, 600V, UFS Series N-Channel IGBTs

Description TheHGTP12N60C3,HGT1S12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchl

HARRIS

Harris Corporation

HGTP12N60C3

包裝：管件 封裝/外殼：TO-220-3 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 24A 104W TO220AB

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

HGTP12N60C3D

24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombinethebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatelybetwee

Intersil

Intersil Corporation

HGTP12N60C3D

24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombinethebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatelybetwee

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTP12N60C3D

包裝：管件 封裝/外殼：TO-220-3 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 24A TO220-3

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

12N60C3D

24A,600V,UFSSERIESN-CHANNELIGBTWITHANTI-PARALLELHYPERFASTDIODE

TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G12N60C3D

UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode24A,600V

TheHGTG12N60C3DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThedevicehasthehighinputimpedanceofaMOSFET andthelowon?stateconductionlossofabipolartransistor.Themuch loweron?statevoltagedropvariesonlymoder

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

HGTG12N60C3D

UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode24A,600V

TheHGTG12N60C3DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThedevicehasthehighinputimpedanceofaMOSFET andthelowon?stateconductionlossofabipolartransistor.Themuch loweron?statevoltagedropvariesonlymoder

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

HGTG12N60C3D

24A,600V,UFSSERIESN-CHANNELIGBTWITHANTI-PARALLELHYPERFASTDIODE

TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTG12N60C3D

24A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

Intersil

Intersil Corporation

HGTG12N60C3D

24A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

Description TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvarieso

HARRIS

Harris Corporation

P12N60C3

24A,600V,UFSSeriesN-ChannelIGBTs

Description TheHGTP12N60C3,HGT1S12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchl

HARRIS

Harris Corporation

產(chǎn)品屬性

  • 產(chǎn)品編號：

    HGTP12N60C3

  • 制造商：

    onsemi

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝：

    管件

  • 不同?Vge、Ic 時?Vce(on)（最大值）：

    2V @ 15V，12A

  • 開關(guān)能量：

    380μJ（開），900μJ（關(guān)）

  • 輸入類型：

    標準

  • 工作溫度：

    -40°C ~ 150°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-3

  • 供應(yīng)商器件封裝：

    TO-220-3

  • 描述：

    IGBT 600V 24A 104W TO220AB

供應(yīng)商型號品牌批號封裝庫存備注價格
ON/安森美
2410+
TO-220
180
原裝正品.假一賠百.正規(guī)渠道.原廠追溯.
 詢價
FAIRCHIL
24+
TO-220
8866
詢價
FAIRCHILD
23+
TO-220
9526
詢價
HARRIS
17+
TO-220
6200
詢價
仙童
06+
TO-220
5000
原裝
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
HARIS
23+
TO-220
2500
專做原裝正品,假一罰百!
 詢價
FAIRCHILD
20+
原裝
65790
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
FAIRC
2020+
TO-220
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
HARRIS/哈里斯
2020+
NA
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
更多HGTP12N60C3供應(yīng)商 更新時間2024-11-1 16:11:00

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