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G12N60C3D中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

G12N60C3D
廠商型號(hào)

G12N60C3D

功能描述

UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 24 A, 600 V

文件大小

270.84 Kbytes

頁(yè)面數(shù)量

9 頁(yè)

生產(chǎn)廠商 ON Semiconductor
企業(yè)簡(jiǎn)稱

ONSEMI安森美半導(dǎo)體

中文名稱

安森美半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二原廠數(shù)據(jù)手冊(cè)到原廠下載

更新時(shí)間

2024-11-1 18:35:00

G12N60C3D規(guī)格書(shū)詳情

The HGTG12N60C3D is a MOS gated high voltage switching

device combining the best features of MOSFETs and bipolar

transistors. The device has the high input impedance of a MOSFET

and the low on?state conduction loss of a bipolar transistor. The much

lower on?state voltage drop varies only moderately between 25°C and

150°C. The IGBT used is the development type TA49123. The diode

used in anti parallel with the IGBT is the development type TA49061.

This IGBT is ideal for many high voltage switching applications

operating at moderate frequencies where low conduction losses are

essential

Formerly Developmental Type TA49117.

Features

? 24 A, 600 V at TC = 25°C

? Typical Fall Time 210 ns at TJ = 150°C

? Short Circuit Rating

? Low Conduction Loss

? Hyperfast Anti?Parallel Diode

? This is a Pb?Free Device

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