G12N60C3D中文資料安森美半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
| 廠商型號 |
G12N60C3D |
| 功能描述 | UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 24 A, 600 V |
| 文件大小 |
270.84 Kbytes |
| 頁面數(shù)量 |
9 頁 |
| 生產(chǎn)廠商 | ON Semiconductor |
| 企業(yè)簡稱 |
ONSEMI【安森美半導(dǎo)體】 |
| 中文名稱 | 安森美半導(dǎo)體公司官網(wǎng) |
| 原廠標(biāo)識 |  |
| 數(shù)據(jù)手冊 | |
| 更新時(shí)間 | 2025-4-22 18:12:00 |
| 人工找貨 | G12N60C3D價(jià)格和庫存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
G12N60C3D規(guī)格書詳情
The HGTG12N60C3D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a MOSFET
and the low on?state conduction loss of a bipolar transistor. The much
lower on?state voltage drop varies only moderately between 25°C and
150°C. The IGBT used is the development type TA49123. The diode
used in anti parallel with the IGBT is the development type TA49061.
This IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses are
essential
Formerly Developmental Type TA49117.
Features
? 24 A, 600 V at TC = 25°C
? Typical Fall Time 210 ns at TJ = 150°C
? Short Circuit Rating
? Low Conduction Loss
? Hyperfast Anti?Parallel Diode
? This is a Pb?Free Device
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
22+ |
TO-220 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
EIC |
23+ |
NA |
39960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
哈理斯 |
TO-247 |
68500 |
一級代理 原裝正品假一罰十價(jià)格優(yōu)勢長期供貨 |
詢價(jià) | |||
IR |
23+ |
TO220 |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種 |
詢價(jià) | ||
進(jìn)口原裝 |
23+ |
TO-247 |
3000 |
全新原裝 |
詢價(jià) | ||
GOFORD谷峰 |
23+ |
TO-252 |
22820 |
原裝正品，支持實(shí)單 |
詢價(jià) | ||
NEC |
22+ |
MSOP-8 |
5000 |
進(jìn)口原裝!現(xiàn)貨庫存 |
詢價(jià) | ||
CHERRY |
新 |
29 |
全新原裝 貨期兩周 |
詢價(jià) | |||
24+ |
SMD |
3200 |
絕對原裝自家現(xiàn)貨!真實(shí)庫存!歡迎來電! |
詢價(jià) | |||
GOFORD |
24+ |
DFN3X3-8L |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實(shí)單! |
詢價(jià) |
