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HGTP12N60C3D

24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombinethebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatelybetwee

Intersil

Intersil Corporation

HGTP12N60C3D

24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombinethebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatelybetwee

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTP12N60C3D

包裝：管件 封裝/外殼：TO-220-3 類(lèi)別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 24A TO220-3

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

12N60C3D

24A,600V,UFSSERIESN-CHANNELIGBTWITHANTI-PARALLELHYPERFASTDIODE

TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G12N60C3D

UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode24A,600V

TheHGTG12N60C3DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThedevicehasthehighinputimpedanceofaMOSFET andthelowon?stateconductionlossofabipolartransistor.Themuch loweron?statevoltagedropvariesonlymoder

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

HGTG12N60C3D

24A,600V,UFSSERIESN-CHANNELIGBTWITHANTI-PARALLELHYPERFASTDIODE

TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTG12N60C3D

UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode24A,600V

TheHGTG12N60C3DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThedevicehasthehighinputimpedanceofaMOSFET andthelowon?stateconductionlossofabipolartransistor.Themuch loweron?statevoltagedropvariesonlymoder

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

HGTG12N60C3D

24A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

Intersil

Intersil Corporation

HGTG12N60C3D

24A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

Description TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvarieso

HARRIS

Harris Corporation

HGTP12N60C3

24A,600V,UFSSeriesN-ChannelIGBTs

TheHGTP12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTP12N60C3

24A,600V,UFSSeriesN-ChannelIGBTs

Description TheHGTP12N60C3,HGT1S12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchl

HARRIS

Harris Corporation

HGTP12N60C3

24A,600V,UFSSeriesN-ChannelIGBTs

TheHGTP12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

Intersil

Intersil Corporation

P12N60C3

24A,600V,UFSSeriesN-ChannelIGBTs

Description TheHGTP12N60C3,HGT1S12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchl

HARRIS

Harris Corporation

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    HGTP12N60C3D

  • 制造商：

    onsemi

  • 類(lèi)別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝：

    管件

  • 不同?Vge、Ic 時(shí)?Vce(on)（最大值）：

    2.2V @ 15V，15A

  • 開(kāi)關(guān)能量：

    380μJ（開(kāi)），900μJ（關(guān)）

  • 輸入類(lèi)型：

    標(biāo)準(zhǔn)

  • 工作溫度：

    -40°C ~ 150°C（TJ）

  • 安裝類(lèi)型：

    通孔

  • 封裝/外殼：

    TO-220-3

  • 供應(yīng)商器件封裝：

    TO-220-3

  • 描述：

    IGBT 600V 24A TO220-3

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
onsemi/安森美
新批次
TO-220
4500
詢價(jià)
onsemi(安森美)
23+
TO-220
1471
原廠訂貨渠道,支持BOM配單一站式服務(wù)
 詢價(jià)
onsemi
23+
9800
原裝正品，訂貨，配單
 詢價(jià)
FAIRCHIL
24+
TO-220
8866
詢價(jià)
FAIRCHILD
05+
原廠原裝
21292
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
FAIRCHILD
23+
TO-220
9526
詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
FAICHILD
23+
TO-220
8000
專(zhuān)做原裝正品,假一罰百!
 詢價(jià)
三年內(nèi)
1983
納立只做原裝正品13590203865
 詢價(jià)
FAIRCHILD
20+
原裝
65790
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
 詢價(jià)
更多HGTP12N60C3D供應(yīng)商 更新時(shí)間2024-11-1 16:18:00

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