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HGTP12N60C3分立半導(dǎo)體產(chǎn)品的晶體管-UGBT、MOSFET-單規(guī)格書PDF中文資料
HGTP12N60C3規(guī)格書詳情
Description
The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C.
Features
? 24A, 600V at TC = 25°C
? 600V Switching SOA Capability
? Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150°C
? Short Circuit Rating
? Low Conduction Loss
產(chǎn)品屬性
- 產(chǎn)品編號:
HGTP12N60C3
- 制造商:
onsemi
- 類別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單
- 包裝:
管件
- 不同?Vge、Ic 時?Vce(on)(最大值):
2V @ 15V,12A
- 開關(guān)能量:
380μJ(開),900μJ(關(guān))
- 輸入類型:
標(biāo)準(zhǔn)
- 工作溫度:
-40°C ~ 150°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3
- 供應(yīng)商器件封裝:
TO-220-3
- 描述:
IGBT 600V 24A 104W TO220AB
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
SMD |
800 |
原裝現(xiàn)貨 |
詢價 | ||
HARRIS |
17+ |
TO-220 |
6200 |
詢價 | |||
FAIRC |
24+ |
TO-220 |
16800 |
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
FAIRCHILDONSEMICONDUCTOR |
21+ |
NA |
1400 |
只做原裝,一定有貨,不止網(wǎng)上數(shù)量,量多可訂貨! |
詢價 | ||
ON Semiconductor |
2022+ |
TO-220-3 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
onsemi(安森美) |
23+ |
TO220 |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費送樣,原廠技術(shù)支持!!! |
詢價 | ||
ON/安森美 |
24+ |
TO-220AB |
860000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
ON/安森美 |
24+ |
N/A |
5000 |
只做原裝正品現(xiàn)貨 |
詢價 | ||
FSC/仙童 |
2224+ |
TO-220 |
17495 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
ON/安森美 |
21+ |
SMD |
30000 |
百域芯優(yōu)勢 實單必成 可開13點增值稅 |
詢價 |