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HGTP10N50F1D中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書
HGTP10N50F1D規(guī)格書詳情
Description
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25℃ and +150℃. The diode used in parallel with the IGBT is an ultrafast (tRR
Features
? 10A, 400V and 500V
? Latch Free Operation
? Typical Fall Time < 1.4μs
? High Input Impedance
? Low Conduction Loss
? Anti-Parallel Diode
? tRR
產(chǎn)品屬性
- 型號：
HGTP10N50F1D
- 制造商：
INTERSIL
- 制造商全稱：
Intersil Corporation
- 功能描述：
10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
TO220 |
58000 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費! |
詢價 | ||
INTERSIL |
23+ |
TO-220 |
90000 |
只做原廠渠道價格優(yōu)勢可提供技術(shù)支持 |
詢價 | ||
FAIRCHILD/仙童 |
23+ |
NA/ |
15638 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
詢價 | ||
FAIRCHILD |
23+ |
TO-220 |
9526 |
詢價 | |||
Intersil |
24+ |
TO-220 |
8866 |
詢價 | |||
HAR |
23+ |
65480 |
詢價 | ||||
HARRIS |
05+ |
原廠原裝 |
7786 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
詢價 | ||
FAIRCHILD |
21+ |
35200 |
一級代理/放心采購 |
詢價 | |||
FAIRCHI |
2020+ |
TO-220 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
仙童/INTERSI |
2023+ |
TO-220 |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 |
