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HGTH20N50E1D中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書

HGTH20N50E1D
廠商型號(hào)

HGTH20N50E1D

功能描述

20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

文件大小

35.86 Kbytes

頁(yè)面數(shù)量

6 頁(yè)

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡(jiǎn)稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-1-14 19:00:00

HGTH20N50E1D規(guī)格書詳情

Description

The HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, and HGTH20N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. They feature a discrete antiparallel diode that shunts current around the IGBT in the reverse direction without introducing carriers into the depletion region. These types can be operated directly from low power integrated circuits.

Features

? 20A, 400V and 500V

? VCE(ON) 2.5V Max.

? TFALL 1μs, 0.5μs

? Low On-State Voltage

? Fast Switching Speeds

? High Input Impedance

? Anti-Parallel Diode

Applications

? Power Supplies

? Motor Drives

? Protective Circuits

產(chǎn)品屬性

  • 型號(hào):

    HGTH20N50E1D

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

  • 制造商:

    Harris Corporation

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