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HGTH20N50C1D中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書

HGTH20N50C1D
廠商型號

HGTH20N50C1D

功能描述

20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

文件大小

35.86 Kbytes

頁面數(shù)量

6

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-15 8:22:00

HGTH20N50C1D規(guī)格書詳情

Description

The HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, and HGTH20N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. They feature a discrete antiparallel diode that shunts current around the IGBT in the reverse direction without introducing carriers into the depletion region. These types can be operated directly from low power integrated circuits.

Features

? 20A, 400V and 500V

? VCE(ON) 2.5V Max.

? TFALL 1μs, 0.5μs

? Low On-State Voltage

? Fast Switching Speeds

? High Input Impedance

? Anti-Parallel Diode

Applications

? Power Supplies

? Motor Drives

? Protective Circuits

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